The invention relates to a barrier gate, in particular to a barrier gate which is simple for installing and is simple for changing the rising and falling directions of the barrier gate.
本发明涉及一种道闸，尤其涉及一种安装简便并且道闸起落方向更换简单的道闸。
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes.
具有栅极的二极管非易失性存储单元，其具有电荷储存结构，包括具有额外栅极端的二极管结构、与位于二极管节点之间的扩散阻挡结构。
A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal and a diffusion barrier structure between the diode nodes.
具有栅极的二极管非易失性存储单元，其具有电荷储存结构，包括具有额外栅极端的二极管结构、与位于二极管节点之间的扩散阻挡结构。
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