However, the chattering with high frequency in sliding mode control systems is barrier for the application to the practice engineering problems.
然而滑模变结构控制带来的高频抖振是其应用到实际系统中的障碍。
The extent is generally related to their potency, frequency of application, the patient's body surface area, and the skin's ability to act as a barrier.
抑制程度基本取决于他们的浓度，给药频率，患者的体表面积和皮肤的屏障能力。
In AC electrical field, the stable homogeneous glow discharge will appear by using dielectric barrier layer and high-frequency power source.
在交流电场中，利用介质阻挡层和高频激励源，可获得稳定均匀的大气压下辉光放电。
Plasma was created by dielectric barrier discharge (DBD) system, which consisted of home-made middle frequency power supply and parallel plane electrode configurations.
等离子体的产生采用了自制中频电源和平行板电极结构组成的介质阻挡放电系统。
The degree of enhanced isolation effect with increasing length of barrier relies on different frequency components.
对不同的频率成分，通过增加屏障的纵向长度而增加的隔振效果差别较大。
The high-frequency and high-voltage pulse power source is the core part of the dielectric barrier discharge.
高频高压脉冲电源是介质阻挡放电的核心部分。
Analogy of hole injection barrier indicates that the interface barrier of ITO is lowered after being treated with the high frequency discharge method using hole-only devices.
用单载流子器件模拟表明ITO经高频放电处理后降低了器件界面的空穴注入势垒。
Firstly, it was contrastively studied that the nanometer carbon black was oxidized by two kind of oxygen plasma: radio frequency discharge (RF) and dielectric barrier discharge (DBD).
本文首先对比研究了两种以氧气作为放电气体的等离子体：电感式射频辉光等离子体(RF)和介质阻挡放电等离子体(DBD)氧化纳米炭黑的工艺。
The heterojunction barrier controlled ballistic electron transistor-a novel three terminal semiconductor device which could be operated competently at millimeter wavelength frequency is proposed.
本文提出一种能在毫米波很好工作的三端半导体器件—异质结势垒控制飞的电子晶体管（简称势垒飞越晶体管）。
The heterojunction barrier controlled ballistic electron transistor-a novel three terminal semiconductor device which could be operated competently at millimeter wavelength frequency is proposed.
本文提出一种能在毫米波很好工作的三端半导体器件—异质结势垒控制飞的电子晶体管（简称势垒飞越晶体管）。
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