The traditional methods for power transistor cant apply to power bare die due to various reasons such as high temperature and high operating currents.
由于存在高温度、大电流等问题，传统的测试与老化筛选功率管的方法不能完全适用于功率裸芯片。
The traditional methods for power transistor cant apply to power bare die due to various reasons such as high temperature and high operating currents.
由于存在高温度、大电流等问题，传统的测试与老化筛选功率管的方法不能完全适用于功率裸芯片。
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