The concept of full photonic bandgap was explained.
阐述了完全光子禁带的概念。
A PMC structure with a complete photonic bandgap has been designed.
设计出了具有完全光子禁带的PMC结构。
Silicon is an indirect bandgap semiconductor emitting light inefficiently.
硅是间接带隙半导体，不能有效地发光。
In this paper, ANNs are applied to study of the bandgap characteristic of DGS.
本文针对神经网络在DGS滤波特性中的应用进行了研究。
A novel exponential curvature-compensated bandgap reference circuit is presented.
提出了一种新型的指数曲率补偿带隙基准源电路。
The ribbons are narrow enough to have an electronic bandgap and thus switching properties.
这种带足够窄以至于形成电学带隙，从而拥有开关性能。
It is believed that the emission peaks were concerned with impurity level in the bandgap.
变温实验说明相应发射峰与材料禁带中形成的杂质能级有关。
The start-up circuit was design for the bandgap voltage reference circuit working normally.
另外设计了启动电路以确保基准电路能正常工作。
The Electromagnetic bandgap(EBG)is a periodic structure with obvious bandstop characteristic.
电磁带隙结构（EBG）是一种周期性结构，具有明显的带阻特性。
It must lose enough energy to fall past the bandgap into the area where electrons are allowed.
它必须失去足够的能量，属于过去的带隙纳入地方电子获准。
Both the optical absorption coefficient and bandgap decrease with increasing in film thickness.
光吸收系数以及禁带宽度均随薄膜厚度的增加而下降。
The voltage reference generator was the expansion of the bandgap circuit for saving the resources.
基准电压产生电路为带隙电路的扩展，节省了资源并得到了高稳定度的基准电压。
One way of introducing a bandgap into graphene is to make extremely narrow ribbons of the material.
给石墨烯引入带隙的方法之一是制作极窄的石墨烯带。
A novel compact electromagnetic bandgap structure is presented, which provides ultra-wide stopband.
提出了一种新颖的小型超宽阻带电磁带隙结构。
A bandgap voltage reference circuit with good stability and high accuracy is designed in this pa - per.
设计了一种具有良好稳定性和高精度的带隙基准电压源电路。
A low voltage current mode bandgap voltage reference circuit with a novel start-up circuit is designed.
介绍了一种低压电流模带隙电压基准电路，并提出了一种新颖的启动电路结构。
The design of a linear temperature compensation voltage bandgap reference is based on the traditional bandgap.
基准电压源根据传统带隙基准温度补偿原理，设计了一级温度补偿的片上带隙基准源。
A thick film has a red shift of direct transition bandgap than thin films due to the strong interface interaction.
由于厚膜中存在较强的表面相互作用，厚膜的直接跃迁禁带宽与薄膜相比发生了红移。
Low power, low voltage and high PSRR are the main challenges in designing bandgap reference for switching regulator.
微功耗、低工作电压、高电源抑制比是在电源芯片中的基准源设计过程中遇到的主要挑战。
The photonic crystal fiber (PCF) with a special envelop structure induces the light by photonic bandgap (PBG) effect.
光子晶体光纤(PCF)是一种具有特殊包层结构的光纤，它是利用光子禁带效应(PBG)来导光的。
DGS are widely applied to rf and microwave circuits to improve the performance because of its bandgap characteristic.
缺陷接地结构由于其带阻特性而被广泛地应用到射频微波电路中，以改善电路性能。
If the photon energy is greater than the bandgap of the cell material, then electrons are excited into the conduction band.
如果光子的能量高于电池材料的能带，那么电子就被激发到导带中。
A low power CMOS bandgap voltage reference source with a start-up circuit is presented based on the bandgap voltage theory.
运用带隙基准的原理，提出了一种带启动电路的低功耗带隙基准电压源电路。
The optical direct bandgap taking blue shift can be explain by quantum confinement effect effective mass approximate method.
针对其光学直接禁带宽度发生蓝移，使用量子限域和有效质量近似方法得到了解释。
The inner layer of the antenna contains nanotubes with a small bandgap, and nanotubes in the outer layer have a higher bandgap.
天线内层是窄带隙的纳米管，与此相反，外层的纳米管则具有较宽的带隙。
The results show that disordered structure provides strikingly extended bandgap compared with the corresponding periodic structure.
研究发现，无序结构光子晶体与周期结构光子晶体相比其带隙显著加宽。
A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented.
本文提出了低温区高精度的禁带宽度的表达式，获得了低温区本征载流子浓度的简明公式。
Bandgap Reference can provide stable voltage with nearly zero temperature coefficient and larger PSRR, and also are process unrelated.
带隙基准可提供近似零温度系数和大的电源电压抑制比的稳定电压基准，且与工艺基本无关。
Bandgap Reference can provide stable voltage with nearly zero temperature coefficient and larger PSRR, and also are process unrelated.
带隙基准可提供近似零温度系数和大的电源电压抑制比的稳定电压基准，且与工艺基本无关。
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