The improvements are attributed by the large increase in average electron mobility as well as in drift velocity at 77 K.
作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高。
The improvements are attributed by the large increase in average electron mobility as well as in drift velocity at 77 K.
作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高。
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