In process parameters, the rf power and pressure affect the number, energy and composition of the basic elements, the substrate temperature effect the surface diffusion and atomic bonding.
工艺参数中，射频功率和压强综合影响了基元数量、能量以及成分，基片温度主要影响表面扩散、原子成键。
In process parameters, the rf power and pressure affect the number, energy and composition of the basic elements, the substrate temperature effect the surface diffusion and atomic bonding.
工艺参数中，射频功率和压强综合影响了基元数量、能量以及成分，基片温度主要影响表面扩散、原子成键。
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