This paper introduces the computer simulation for the anisotropic etching used in micro-machining of sensors.
本文介绍传感器微机械加工中使用的各向异性腐蚀的计算机模拟。
The size of the parallelogram is analyzed and designed according to anisotropic etching properties of silicon.
依据硅的各向异性腐蚀特性对平行四边形蚀坑尺寸进行了分析设计。
Two mutually vertical fibers coupling grooves are fabricated by using anisotropic etching of the(110) silicon in the KOH solution.
利用（110）硅片在KOH溶液中各向异性腐蚀制作出两个互相垂直的光纤定位槽。
When remains the DC power, the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropic etching to anisotropic etching.
在直流功率一定时，工作气压的降低会导致刻蚀速率的增加，并且刻蚀由各向同性转变为各向异性。
During fabrication of the NEMS probes, KOH anisotropic etching technology has been developed for the formation of suitable silicon island with top size within 0.5 to 0.8m.
在器件制造的过程中，采用KOH各向异性腐蚀硅尖技术制造出了顶部尺寸在0.5～0.8微米范围内符合要求的硅岛；
Application of TMAH solutions which is used as etchant in boron etch-stop and anisotropic etching process in the manufacturing of single-crystal and polysilicon pressure sensors is mainly discussed.
介绍了四甲基氢氧化铵(TMAH)溶液的腐蚀特性，论述了在单晶硅和多晶硅高温压力传感器的制作过程中，TMAH腐蚀液在浓硼终止腐蚀和各向异性硅杯腐蚀两个制作工艺中的应用。
Application of TMAH solutions which is used as etchant in boron etch-stop and anisotropic etching process in the manufacturing of single-crystal and polysilicon pressure sensors is mainly discussed.
介绍了四甲基氢氧化铵(TMAH)溶液的腐蚀特性，论述了在单晶硅和多晶硅高温压力传感器的制作过程中，TMAH腐蚀液在浓硼终止腐蚀和各向异性硅杯腐蚀两个制作工艺中的应用。
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