The element employs a bifilar wound wire grid on an insulating substrate.
元件系用双股绕线网缠绕在一块绝缘基板上。
The element employs a bifilar wound wire grid on an insulating substrate .
元件系用双股绕线网缠绕在一块绝缘基板上。
A way to circumvent the problem is to fabricate devices in small islands of silicon on an insulating substrate as shown in Fig. 32.
消除这个问题的一个方法是把器件制造在绝缘衬底的硅岛上，如图32所示。
The equivalent circuit model gives the instantaneous relationship between the sheath thickness and the surface potential at an insulating substrate placed on the pulse-biased electrode.
模型包括离子连续性方程、动量方程和泊松方程，特别是提出了可以自洽地决定绝缘基板表面电势、表面电荷密度和鞘层厚度关系的等效电路方程。
Both of the right and left charge storage regions having a thin oxide layer on the semiconductor substrate, a nitride layer on the thin oxide layer and an insulating oxide layer on the nitride layer.
左和右电荷存储区都具有半导体衬底上的薄氧化物层、薄氧化物层上的氮化物层和氮化物层上的绝缘氧化物层。
Among them, the active component on the substrate has an insulating layer.
其中，位于基板上的主动元件具有一绝缘层。
The annular insulating substrate includes an annular inner edge, an annular outer edge and a first surface.
环状绝缘基板具有一环状内缘、一环状外缘及一第一表面。
The silicon wafer comprises a silicon substrate, an insulating layer, at least one electric element and at least one perforating hole.
该硅晶片包括硅基材、绝缘层、至少一电性元件及至少一穿导孔。
The silicon wafer comprises a silicon substrate, an insulating layer, at least one electric element and at least one perforating hole.
该硅晶片包括硅基材、绝缘层、至少一电性元件及至少一穿导孔。
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