The method of measuring c, s, p, Mn, Si, Cr, Ni, Mo, V, W, ti, Nb, Al element content by DV-4 photoelectric spectroscope on one condition is introduced.
介绍了应用DV - 4光电光谱仪，仅用一种测定条件，测定高合金钢中碳、硫、磷、锰、硅、铬、镍、钼、钒、钨、钛、铌、铝元素的含量的方法。
The Al, Pb, Cu, Cd, Fe, Sn etc trace element in the electrolytic zinc were accurately and quickly measured by using ICP-AES method.
采用ICP—AES法准确、快速地测定电锌中的铝、铅、铜、镉、铁、锡等微量元素，并对方法的准确度和精密度进行了检验。
A theoretical approach analyzing electrical performance for dielectric loaded du al-layer Frequency Selective Surface (FSS) configuration with dissimilar lattice and element geometries is proposed.
提出了一种研究不同栅格及单元外形并有介质加载的双层频率选择表面（FSS）电性能的理论分析方法。
Chemical structures of products were confirmed by element analysis, ir, MS, et al.
所得产物经元素分析，红外光谱，质谱等分析确证结构。
The expansion coefficient of this cast iron without Ni element can be closed to that ofZL102 Al alloy.
利用该成分，可获得接近ZL102 合金膨胀系数的新型无镍的高膨胀系数铸铁。
Aluminum is the most abundant metal and the third most common element in the earth's crust and al toxicity is the major growth-limiting factor for crop cultivation on acid soils.
铝是地球上最丰富的金属和第三个最常见的元素在地壳和铝毒害是主要的生存限制因素为农作物的种植在酸性土壤。
Stress of al motorcycle wheel under the service condition was analyzed with finite element method (FEM).
用有限元法对服役状态的摩托车铝合金轮毂进行了应力分析。
The thermal stress in magnetron sputtered al coating on uranium substrate was studied by thermal elastic plastic finite element method (FEM).
对铀表面磁控溅射沉积铝镀层的热应力进行了热弹塑性有限元分析。
G. Fung et al. Results the modulus and phase simulated by the nine-element lumped parameter model could fit the goal input impedance well.
结果三弹性腔九元件集中参数模型模拟出的输入阻抗模和幅角与目标输入阻抗模和幅角能较好的吻合。
The results show that interface element diffusion and reaction on interface in vacuum hot-pressing sintering processing improved interface strength. Fracture occurred mainly in Al matrix.
结果表明，真空烧结过程中出现了界面反应，改善了界面结合强度，断裂破坏主要在基体上进行。
The results show that interface element diffusion and reaction on interface in vacuum hot-pressing sintering processing improved interface strength. Fracture occurred mainly in Al matrix.
结果表明，真空烧结过程中出现了界面反应，改善了界面结合强度，断裂破坏主要在基体上进行。
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