When the ratio of minority carriers'diffusion length to the substrate thickness is about 2.5 to 3, the crystalline silicon cells with an Al-BSF can gain the optimal output performance.
当少子扩散长度与衬底厚度的比值为2.5-3时，具有铝背场结构的单晶硅电池可获得最佳的输出特性。
The back ohmic contact resistance of Al-BSF by DC magnetron sputtering is downtrend with the annealing temperature increasing, and less than that by the screen printing process.
溅射工艺制备出的铝背场接触电阻随退火温度升高呈下降趋势且溅射工艺的接触电阻比印刷工艺更小。
The back ohmic contact resistance of Al-BSF by DC magnetron sputtering is downtrend with the annealing temperature increasing, and less than that by the screen printing process.
溅射工艺制备出的铝背场接触电阻随退火温度升高呈下降趋势且溅射工艺的接触电阻比印刷工艺更小。
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