The instant access memory of a large computer may hold up to 100,000 "words"—string of alphabetic or numerical characters—ready for instant use.
一台大型计算机的即时存取存储器可容纳多达100000个“单词”——字母或数字字符的字符串——随时可用。
The most significant difference between the SPE and PPE lies in how they access memory.
SPE与PPE之间最显著的差别在于访问内存的方法。
New assembly language programmers are sometimes surprised by how many different ways you can access memory.
新接触汇编语言的程序员有时可能会对我们有多少访问内存的方法感到惊奇。
Samsung was the sole profitable firm among major global dynamic random access memory (DRAM) chip makers in the third quarter.
在第三季度，三星公司是在全球动态随机存取记忆(DRAM)芯片制造商中唯一盈利的公司。
The bytecode verification process guarantees that an application cannot access memory spaces or use resources outside of its domain.
字节码验证过程保证了应用程序不能访问内存空间或使用其域外的资源。
There are two types of memory chips: read only memory (ROM) and random access memory (RAM).
参考答案：有两种类型的记忆体晶片：只读存储器(ROM)和随机访问存储器(RAM)。
A program used to read a program from an input device, and, usually, into some type of random access memory.
一种程序，用来把一程序从输入设备读到某种类型的随机存储器中。
The debugging services call methods on this interface to access memory and other data in the target process.
调试服务调用此接口上的方法以访问内存和目标进程中的其他数据。
A magnetic random access memory (MRAM) and a manufacturing method and a programming method thereof are provided.
本发明公开了一种磁性存储器及其制造方法与写入方法。
The invention discloses a controller of a dynamic random-access memory (DRAM) and a user instruction treatment method.
本发明公开了一种动态随机访问存储器（DRAM）的控制器及用户指令处理方法。
The C language allows indirect access memory location by pointer without boundary check, which may cause buffer overflow.
由于C语言允许通过指针进行间接内存访问，但并不进行边界检查，因此可能存在缓冲区溢出。
Resistive random access memory (RRAM) is one of the most promising candidates for next generation of non-volatile memory.
在各种新型非挥发性存储器中，阻变存储器(RRAM)具有成为下一代存储器的潜力。
The reason you may need to access memory outside the current process context is that some drivers create threads in the SYSTEM process.
你需要在进程上下文之外访问内存的原因也许是一些驱动在SYSTEM进程中创建了线程。
In one embodiment, the semiconductor device includes a static random access memory (SRAM) cell having numerous NFETs (110) and PFETs (112).
在一个实施例中，所述半导体器件包括具有多个NFET(110)和多个PFET(112)的静态随机存取存储器(SRAM)单元。
When a program tries to access memory using a virtual address, the OS in combination with on-chip hardware maps that virtual address to the physical location.
当程序尝试使用虚拟地址访问内存时，操作系统结合片上硬件将该虚拟地址映射到物理位置。
You'll notice that the context code ran and displayed a lot of useful information about the current process, but it was unable to access memory in the data segment.
您将会注意到context代码运行并显示大量有关当前进程的有用信息，但它不能访问数据段中的内存。
Applications that are processor intensive and access memory frequently will benefit the most since NUMA decreases the time it takes a processor to access a region in memory.
处理器密集型和内存访问频繁的应用程序将获得最大收益，因为NUMA减少了处理器访问内存区域的时间。
Applications that are processor intensive and access memory frequently will benefit the greatest since NUMA decreases the time it takes a processor to access a region in memory.
使用处理器较多而且频繁访问内存的应用程序将最为受益，因为NUMA减少了某个处理器访问内存中某个区域的时间。
The POWER Hypervisor performs virtual memory management using a global partition page table, and manages any attempt by a partition to access memory outside its allocated limit.
POWER Hypervisor使用全局分区页表执行虚拟内存管理，并管理分区尝试访问超出其分配限制之外的内存的请求。
The invention discloses a multi-resistance state resistor random-access memory unit and a preparation method thereof, and belongs to the technical field of microelectronics.
本发明公开了一种多阻态电阻随机存储器单元及其制备方法，属于微电子技术领域。
The invention provides an organic resistive random access memory and a preparation method thereof, which belong to the technical field of very large scale integrated circuit.
本发明提供了一种有机阻变存储器及制备方法，属于超大规模集成电路技术领域。
The invention provides a polymorphic organic resistive random access memory and a preparation method, and belongs to the technical field of a super-large-scale integrated circuit.
本发明提供了一种有机阻变存储器及制备方法，属于超大规模集成电路技术领域。
Dynamic random access memory (DRAM) suffers from the bridge issue due to the WSix residue on gate sidewall, which is the bottleneck to enhancing the product's yield and reliability.
动态随机存储器栅极侧壁硅化钨残留造成的短路成为制约提高产品良率及可靠性的瓶颈。
The reason that this process takes so long is that a computer's operating system must be loaded from its hard disk into its random-access memory (RAM) every time the machine is turned on.
这个过程花这么长时间的原因是，每当打开计算机时，计算机的操作系统必须从硬盘载入到随机存取存储器(RAM)。
With a VM system, you have two primary areas that store information about the active applications and the data it USES — the physical random access memory (RAM) and space allocated on hard drives.
使用VM系统，您有两个主要区域来存储有关活动应用程序及其使用的数据的信息——物理随机访问存储器(RAM)和硬盘驱动器上分配的空间。
This paper introduced the giant magnetoresistance materials and their applications to magnetoresistance sensors, read head for high density magnetic recording and magnetic random access memory.
介绍了巨磁电阻材料在高密度读出磁头、磁传感器、磁性随机存储器等领域的应用。
The Phase I grant supported a six-month effort to develop a low-power 'green' battery with a 30-plus year shelf life that will power a SRAM (static random access memory) circuit for a computer device.
阶段I合同为期6个月，开发一个低功率“绿色”电池，附带30年保存期限，为计算机设备SRAM(静态随机存取内存)电路提供动力。
Resistive random access memory (RRAM) is anticipated to be the promising next generation non-volatile memory operating with fast switching speed, low power consumption and nondestructive readout.
电阻型随机存储器（RRAM）以其运行速度快、功耗低和非破坏性读出等特性，被预期为理想的新一代非易失存储器。
Automatic memory management can eliminate common problems, such as forgetting to free an object and causing a memory leak, or attempting to access memory for an object that has already been freed.
自动内存管理可解决常见问题，例如，忘记释放对象并导致内存泄漏，或尝试访问已释放对象的内存。
This paper introduces the giant (GMR) and tunneling (TMR) magnetoresistive effect. The recent application and development of the magnetic random access memory (MRAM) for computer are discussed also.
介绍了巨磁电阻(GMR)及隧道磁电阻(TMR)效应，讨论了计算机磁随机存储器(MRAM)的最新应用开发。
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