Since the utility model adopts a support leg with a buffer layer, and therefore, impact can be buffered, and the support leg has simple structure and convenient processing.
由于本实用新型采用了设有缓冲层的支脚，所以能够缓冲撞击，并且结构简单，加工方便。
The resistance transformation type memorizer with a buffer layer structure has simple manufacturing process and low manufacturing cost, and is compatible to the traditional CMOS process.
本发明提供的具有缓冲层结构的电阻转变型存储器制造工艺简单、制作成本低并且与传统CMOS工艺兼容。
The resistance transformation type memorizer with a buffer layer structure has simple manufacturing process and low manufacturing cost, and is compatible to the traditional CMOS process.
本发明提供的具有缓冲层结构的电阻转变型存储器制造工艺简单、制作成本低并且与传统CMOS工艺兼容。
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