The ion implanted bottom-gate a-Si TFT has been successfully fabricated on the basis of fabrication simulation. Typical output characteristics and quite high TCC are achieved.
在工艺参数仿真的基础上成功地研制了离子注入型背栅非晶薄膜晶体管，并得到了典型的输出特性。
The a-Si thin film transistor (TFT) used as room temperature infrared detector is studied.
研究了用于室温红外探测的非晶硅薄膜晶体管。
The a-Si thin film transistor (TFT) used as room temperature infrared detector is studied.
研究了用于室温红外探测的非晶硅薄膜晶体管。
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