目前市面上多数的白色发光二极管都是基于氮化镓的.
Most of the white LEDs now on the market are based on gallium nitride.
基于蓝宝石的氮化镓发光二极管的一般内量子效率约为70%。
A gallium nitride LED on sapphire has a typical internal quantum efficiency of around 70%.
氮化镓将给予作战人员在战场上更大的机动性、效能和可靠性。
GaN will also give the warfighter significantly more mobility, capability and reliability on the battlefield.
氮化镓是一种用来生产亮蓝色LED的半导体。
Gallium nitride is a semiconductor used to create bright-blue LEDs.
研究者们在“概念验证”实验中使用的半导体材料是氮化镓。
The researchers used a gallium nitride semiconductor in the "proof of concept" tests.
氮化镓技术提供更高的可靠性和效率，从而降低功耗总量，放宽冷却要求。
GaN technology provides increased reliability and efficiency, resulting in lower prime power consumption and relaxed cooling requirements.
即使是在目前的早期阶段，他认为硅基的氮化镓发光二极管就已经具有商业意义了。
Yet even at this early stage he thinks gallium nitride-on silicon LEDs would make commercial sense.
雷声公司称正在演示使用氮化镓微波集成电路放大器的发射-接收模块。
Raytheon says it is demonstrating that transmit-receive modules using GaN-powered monolithic microwave integrated circuit amplifiers (MMICs).
目前LED同硅晶片的制作设备类似，都是通过在蓝宝石衬底片上沉淀氮化镓层实现。
At present these LEDs are made in machines similar to those used to make silicon chips, by depositing layers of gallium nitride on sapphire-based wafers.
富士通公司指出使用氮化镓高电子迁移率晶体管技术后，新型放大器功率比目前使用砷化镓晶体管的放大器的功率提高了6倍多。
Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
20世纪80年代后叶akasaki和他的同事们在名古屋大学通过添加少许镁制造出首例p型氮化镓。
In the late 1980s Isamu Akasaki and his colleagues at Nagoya University created the first p-type gallium nitride by incorporating tiny amounts of magnesium.
他发现在生成p型氮化镓的时候需要利用高温氨，以致于把氢原子引入了晶体之中。
He found that producing p-type gallium nitride, which made use of ammonia at high temperatures, trapped hydrogen atoms inside the crystal.
20世纪70年代早期RCA的确成功的从氮化镓二极管中析出些许光线，但是它的蓝色LED太暗并且功效低下。
In the early 1970s RCA did succeed in coaxing some light from gallium nitride-based diodes, but its blue LEDs were inefficient and dim.
美国雷声公司正在为未来雷达的升级，开发一种基于氮化镓的发射-接收模块。
April 16, 2008...Raytheon of Tewksbury, Massachusetts USA, is developing gallium nitride-based transmit-receive modules for use in future radar upgrades.
氮化镓最终被发现很难做到没有瑕疵，即使n型氮化镓很容易被造出，p型却不然。
Gallium nitride turned out to be difficult to grow without defects, and although n-type gallium nitride could be made easily, p-type could not.
在托马斯教授看来，今天又出现了新的问题，那就是能源。他说：“我们认为氮化镓能够像硅材料解决计算机信息储存量问题一样，解决现在的设备的耗能问题。”
"Today's challenge is energy," says Palacios, "and we believe that gallium nitride can be just as important in addressing the energy challenge as silicon was in addressing the information challenge."
近年来，氮化镓基led在发光效率上有很大的进展，不过在静电防护上却还有很大的改善空间。
In recent years, there is a large improvement on the luminous efficiency of LEDs. However, there are some problems in LED ESD protection.
阐述了在氮化镓生长中使用的蓝宝石晶片净化的重要性。
The significance of sapphire wafer cleaning in growing of GaN is explained.
目前氮化镓基器件大多数制作在蓝宝石上。
At present, Most of GaN-based devices are fabricated on sapphire.
通过金属有机物化学气相沉积方法在碳纳米管模板上生长氮化镓纳米线束。
Template growth of gallium nitride nanowires was demonstrated by metal organic chemical vapor deposition (MOCVD) with carbon nanotubes as templates in this paper.
用XRD、SEM、TEM和HRTEM对氮化镓纳米结构表面形貌和微结构进行了分析研究。
The XRD, SEM, TEM, and HRTEM are employed to analyze the morphology and structures of GaN nanostructures.
碳化硅二极管已在市场上超过14年，并正在成为一个成熟的技术，不留下任何余地氮化镓二极管。
SiC diodes have been on the market for over 14 years, and are becoming a mature technology, leaving no room for GaN diodes.
2014年，诺贝尔物理学奖被授予了蓝色氮化镓电致发光二极管的研发。由此可见，蓝光的释放对于多色和白色电致发光二极管的研制是至关重要的。
For the production of a multicolour or white LED, emission of blue light is crucial the 2014 physics Nobel prize was awarded for the development of blue gallium nitride LEDs.
真正的竞争不是氮化镓和碳化硅，但世行集团之间对现任硅基技术。
The real competition is not between GaN and SiC, but WBG versus incumbent silicon-based technology.
氮化镓晶体管已经取得了他们的方式进入低电压应用，碳化硅会发现难以望其项背。
GaN transistors have made their way into low-voltage applications, which SiC will find difficult to challenge.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
“但是要达到大幅削减价格，还需依赖重大突破，如最近英国剑桥大学的氮化镓研究中心之成果。”多了“达到”吧？
But the biggest cost reduction will come from breakthroughs like that recently made by the Centre for Gallium Nitride at Cambridge University, England.
“但是要达到大幅削减价格，还需依赖重大突破，如最近英国剑桥大学的氮化镓研究中心之成果。”多了“达到”吧？
But the biggest cost reduction will come from breakthroughs like that recently made by the Centre for Gallium Nitride at Cambridge University, England.
应用推荐