本文研究了有机铁电薄膜的极化疲劳过程。
In this paper we report the studies on polarization fatigue in ferroelectric vinylidene fluoride and trifluoroethylene copolymer films.
研究了铋层类钙钛矿结构铁电薄膜的极化疲劳问题。
Fatigue problem of bismuth layered structure perovskite thin films (BLTF) is investigated.
最后简要地指出了铁电薄膜的理论与应用研究的前景。
Finnlly, it is concisely pointed out the prospects of ferroelectric thin film study and applications.
最后简要地指出了铁电薄膜的理论与应用研究的前景。
Finnlly, it is concisely pointed out the prospects of ferroelectric thin film study and application...
在此基础上本文又进行了pzt铁电薄膜的掺杂性能的研究。
This paper studied the properties of the PZT films modified by the introduction of some dopants.
本文用朗道自由能展开研究了有电畴的铁电薄膜的相变特性。
The phase transition characteristics of ferroelectric films with domain structure were studied using Landau free energy expansion.
此外，随退火温度升高，铁电薄膜的自发极化强度先增强后减弱。
The spontaneous polarization of ferroelectric films was strengthened and then weakened with the increasing of annealing temperature.
在这些器件的制作过程中，铁电薄膜的微图形化是非常重要的一环。
In the preparing process of these devices, the micropatterning of ferroelectric thin films is very important.
在这些应用中，制备供集成铁电薄膜的优质底电极就显得尤为重要。
In these applications, it is essential to fabricate high quality ferroelectric thin films on proper electrode materials, such as conductive oxides.
而漏电流进一步降低，且降幅增大，这对提高铁电薄膜的性能有一定的意义。
The leakage current was also observed to decrease, which is useful for improving the properties of the thin films.
对两种铁电薄膜的厚度、XRD图谱、SEM图像和电滞回线进行了比较和分析。
The thickness, XRD images, SEM pictures and electric hysteresis loops of these two thin films were analyzed and compared.
本文运用KA模型研究了铁电薄膜的电畴反转特性与外加电场强度以及温度的关系。
The dependence of domain reversal characteristics of the ferroelectric thin film on external electric field and temperature is investigated by using the KA model.
进一步分析发现，膜厚通过影响矫顽场强和最大极化强度进而影响铁电薄膜的电压非线性。
It is found that the film thickness dependence of the dielectric nonlinearity is determined by that of the coercive electric field and the maximal polarization.
PS T铁电薄膜的制备方法多种多样，各具优缺点，不同的制备工艺对薄膜的性能有影响。
There are many methods for preparation of PST thin films, and each has its advantages and disadvantage.
为了提高制备铁电薄膜的可靠性和重复性，设计了基于PLC控制的液态源MOCVD系统。
In order to enhance the reliability and repeatability of the ferroelectric thin film preparation, the liquid source MOCVD system is designed based on PLC.
本文综述了用溶胶—凝胶法制备择优取向铁电薄膜的工艺方法、特点和机理的最新研究进展；
Preparation and characteristics of preferred oriented ferroelectric thin films derived from sol-gel method are described.
讨论了PLZT铁电薄膜的热处理工艺条件、结构特性、光谱特性与材料的表观裂纹、晶态与非晶态之间的关系。
We also discuss in detail the relation between heat treatment technology, phase structures, optical spectroscopic properties with apparent crackle, crystalline state and amorphous state etc.
铁电薄膜的极化疲劳是一个多种因素共同参与的复杂过程，而以往的模型大多只考虑一种因素主导而忽略了其他的因素。
Fatigue in ferroelectric thin films is a complex process caused by many kinds of factors. Previous models tend to include single major factor ignoring others.
另外，在本文的开始部分，介绍了铁电材料的研究背景，铁电薄膜的主要研究方法，国内外对铁电薄膜的研究现状以及钛酸钡晶体的相变过程和铁电性质等。
In the beginning of this paper, background of ferroelectrics, main research methods of ferroelectric film, research status of ferroelectric film and BaTiO3 crystal phase transition are introduced.
实验表明，采用合适的工艺参数能制备出具有钙钛矿型结构的PZT铁电薄膜。
The experiments show that the PZT ferroelectric thin film with pe-roskite structure can be produced using reasonable process parameters.
同均一相pzt薄膜材料相比，由致密层和多孔层交替排列形成的近周期PZT多层膜具有铁电、介电增强效应。
Compared with the uniform PZT thin films, the PZT multilayer with alternating dense-PZT and porous-PZT layers exhibits an enhancement both in ferroelectric and dielectric performances.
该薄膜是研制铁电微型致冷器和非致冷热释电红外焦平面阵列的优选材料。
PST thin films are excellent materials for preparing ferroelectric miniature refrigerator and uncooled pyroelectric infrared focal plane arrays.
本质上，电泡是铁电薄膜中电畴所承受的压缩力与扩张力稳定平衡的结果，是电畴的一种稳定结构。
Radically, electronic bubble is a result of stabilization of electronic domain structure in feroelectronic film bettwen compression force and dilation force.
PS T铁电薄膜是一种具有优良铁电、热释电和介电等性能的铁电材料。
PST thin films are ferroelectric materials with many advantages such as excellent ferroelectric, pyroelectric and dielectric properties.
薄膜生长技术的进展，为压电和铁电薄膜集成固体器件在各个领域的应用开辟了广阔的前景。
Through the progress of film growth technology, new prospects are created in a wide range for integrated solid state devices made of piezoelectric and ferroelectric films.
这些较好的实验结果是在硅基衬底上的铁电薄膜中获得的，因而对研制单片集成的红外热释电阵列将有一定的意义。
Since these good results are obtained from the films on silicon, it is therefore of significance for monolithic integrated infrared image sensors.
结果表明，制得的LNO薄膜可用作集成铁电薄膜器件的底电极。
Our results showed that the LNO thin films could be used as bottom electrodes for integrated ferroelectric thin film devices.
结果表明，制得的LNO薄膜可用作集成铁电薄膜器件的底电极。
Our results showed that the LNO thin films could be used as bottom electrodes for integrated ferroelectric thin film devices.
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