瓷盘装饰品早就不见踪影，取而代之的是具有历史纪念意义的金属器件和印第安陶器。
The decorative china plates are long gone. Historic metal gadgets and Native American pottery now stand in their stead.
瓷盘装饰品早就不见踪影，取而代之的是具有历史纪念意义的金属器件和印第安陶器。
The decorative china plates are long gone. Historic metal gadgetsand Native American pottery now stand in their stead.
法是采用手工的吸锡抢或金属吸锡线，但是效率低、容易损伤板子和器件。
Method is a manual suction grab or metal tin tin absorption line, but low efficiency, easy to damage the board and device.
这种坚固而经济的器件是由两种不同的金属结合而成。
These rugged and inexpensive devices are formed by the junction of two dissimilar metals.
应用：可标记金属及多种非金属。广泛应用于电子元器件、五金制品、眼镜钟表、首饰饰品、汽车配件、塑胶按键等。
Applications: Can mark on metals and a variety of non-metals. Widely used in electronic components, hardware, glasses, clocks, jewelry, auto parts, plastic buttons, ect.
应用：可标记金属及多种非金属。广泛应用于电子元器件、电脑周边、仪表仪器、汽车配件、塑胶按键等。
Applications: Can mark on metals and a variety of non-metals. Widely used in electronic components, computer peripherals, instrumentation, auto parts, plastic buttons, etc.
并尝试替换器件的中间金属纳米层，为拓展器件结构和制作方法做出一定的尝试性工作。
Try to replace the metal -nanocluster layer with different material and make some basic progress in expanding the structure and process of device fabrication .
本文根据计算机辅助设计的结果，详细研究了毫米波双金属E面电路滤波器的优良性能，展示了这种器件的广阔应用前景。
By means of the results for computer-aided design this paper discusses in detail the advantages of E-plane filters with double metal inserts and reveal broad prospects of this device.
本文介绍了真空微电子器件场发射金属尖阵列阴极的制备工艺技术。
This paper describes a fabrication technology of metal tip field emission arrays (FEA) for the vacuum microelectronic devices.
利用声学扫描检测技术，提示了热烧毁的微波功率器件氧化铍陶瓷基片与底座金属散热片的焊接不良现象；
Burn-out of a microwave power device due to the poor bonding between beryllium oxide and base metal sink was investigated using Sound Scanning technique.
鉴别电真空用金属材料真空性能的好坏，对电真空器件的生产有直接帮助。
Identifying the vacuum property of metal materials is very helpful to the manufacture of electronic devices.
金属光子带隙结构在高能加速器、微波真空电子器件和太赫兹波源等方面具有重要的应用前景。
The metal photonic band gap structure has potentialities in the areas of high-energy accelerators, microwave vacuum electron devices, and terahertz radiation sources etc.
本发明属于微电子器件技术领域，具体为一种形成超薄可控的金属硅化物的方法。
The invention belongs to the technical field of microelectronic devices, in particular to a method for forming ultrathin controllable metal silicide.
利用SU -8光刻胶为主要材料，采用多级曝光和电铸金属实现3D结构的工艺技术，研制出了微针执行器的雏形器件。
The rudiments of microneedle actuator have been developed, which is mainly made of SU 8 photoresist, and its 3D construction is fabricated by multistep exposal and electroforming metal.
金属纳米晶存储器件具有低功耗、高速读写特性及较高的可靠性，因此近年来在非易失存储器研究领域备受关注。
In recent years, in the field of non-volatile memory research, metal nanocrystal memory with low-power, high-speed read and write characteristics and high reliability receives much attention.
在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.
半导体器件。要求和检验。陶瓷绝缘的金属外壳。
Semiconductor devices; metal cases with ceramic insulation, requirements and tests.
用途：供制作金属钐、永磁材料、电子器件等用。
USES: Used for making metallic samarium, permanent magnetic material and electronic devices, etc.
用途：供制作金属钐、永磁材料、电子器件等用。
USES: Used for making metallic samarium, permanent magnetic materials and electronic devices, etc.
金属还原方法，多层互连结构及制法，半导体器件及制法。
Method for reducing metal, multilayer interconnection structure and manufacturing method for the same, and semiconductor device and manufacturing method for the same.
由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。
High leakage currents and soft reverse current-voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix.
这种结构的金属薄膜在光印刷、近场显微镜和光子器件等方面有着广泛的应用前景，近年来引起了人们的重视。
There has been a great interest in such structured films due to its potential applications in photolithography, near field microscopy and photonic devices.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
一种半导体器件(10)，具有在最后的互连层(16)和接合焊盘之间的接触，该接合焊盘包括接合焊盘(28)和最后的互连层(16)之间的阻挡金属(26)。
A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16).
此外，我们系统中采用的金属探针可同时用于AFM及电学特性成象，比如电阻，电容，这些是器件应用中的重要参数。
In addition, the metal tips used in our set-up can be utilized to make simultaneous AFM and electrical mappings such as resistance and capacitance that are critical parameters for device applications.
电子元器件质量评估协调体系。分规范。直流金属化聚碳酸酯薄膜固定电介质电容器。
Harmonized system of quality assessment for electronic components. sectional specification. fixed metallized polycarbonate film dielectric d. c. capacitors.
其它的工业用途包括生产化学品、塑料、橡胶、金属和电子元器件。
Other industrial uses include the production of chemicals, plastics, rubber, metals, and electronic components.
特别适合金属工艺品、精密零部件及精密陶瓷切割器件的快速成型切割。
It is especially suitable for rapid prototyping cutting on metal art craftworks, precision parts and components and precision ceramic apparatus.
应用：可标记金属及多种非金属。广泛应用于电子元器件、五金制品、眼镜钟表、首饰饰品、汽车配件、塑胶按键等行业。
Applications: Can mark on metals and a variety of non-metals. Widely used in electronic components, hardware, glasses, clocks, jewelry, auto parts, plastic buttons and other industries.
应用：可标记金属及多种非金属。广泛应用于电子元器件、五金制品、眼镜钟表、首饰饰品、汽车配件、塑胶按键等行业。
Applications: Can mark on metals and a variety of non-metals. Widely used in electronic components, hardware, glasses, clocks, jewelry, auto parts, plastic buttons and other industries.
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