研究结果表明，量子点中的相干自旋振荡可以导致自旋电流的产生。
The coherent spin oscillations in the dot provide a source for generating spin current.
这在自旋电子学中是一个重要的性质，因为使自旋电子学器件工作的就是自旋电流。
This is an important property in the spintronics, because what makes spin devices work is spin current.
当左右电子库之间存在偏压时，通过对系统的自旋电流与电荷流公式的分析，得到系统中只存在电荷流而没有自旋电流的条件。
It is discovered that when there is bias between the left and right reservoirs, we can get the condition of system with only charge current.
唯一的挑战是，如何提取自旋来形成一个自旋极化的电流，然后注入到电路中并保持极化在沿途不发生退化。
The challenge, however, is extracting the spins to form a spin-polarized current and injecting them into a circuit without the polarization degrading along the way.
这是因为相比于生成电流而言，输运和改变自旋所需的能量要远少得多。
This is because the energy required to transport and process spins is much less than that needed to create electron currents.
它将可用控制自旋代替电荷电流制造电子电路。
Electronic circuits based on the manipulation of spin, rather than charge currents, are a goal in their own right.
通过求解该方程的解析解，给出了赝自旋阀在电流激励下的磁化翻转条件和临界电流密度的表达式。
Conditions of magnetization reversal and the corresponding critical currents were found by solving the dynamic equation analytically.
在文章的最后部分分析了自旋翻转对系统抽运电流的影响，得出自旋翻转可以明显得增大抽运电流。
In the last part, we analyze the influence of spin flip on the spin current through the system, discovering that the spin flip could enhance the spin current.
首先，在利用自旋极化电流来驱动之磁性记忆体的研究中，发现藉由改变自 由层钴铁硼的覆盖层可以用来调变它的饱和磁化量以及自旋阻尼系数。
Firstly, in the concept of spin torque transfer MRAM, we can manipulate the damping constant and saturation magnetization of CoFeB by simply adjusting the capping layers.
首先，在利用自旋极化电流来驱动之磁性记忆体的研究中，发现藉由改变自 由层钴铁硼的覆盖层可以用来调变它的饱和磁化量以及自旋阻尼系数。
Firstly, in the concept of spin torque transfer MRAM, we can manipulate the damping constant and saturation magnetization of CoFeB by simply adjusting the capping layers.
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