用离子注入技术保证电路具有较好的一致世。
The ion implantation technology is used for a good uniformity of the circuit performance.
离子注入技术已成为制备光波导的有效手段之一。
Ion implantation has become one of the most promising techniques for the fabrication of various waveguides.
氦离子用等离子体浸没离子注入技术注入硅片中。
Helium ion was implanted by plasma immersion ion implantation technology.
本文评述了在金属材料领域中应用离子注入技术的现状；
The present situations of applying ion implantation technique in metallic materials are reviewed.
离子注入技术不仅能改变材料的表面性能，电能够提高金属产品质量。
The technology of ion implantation not only can change surface properties of materials but also can improve qualities of metallic products.
利用多级离子注入技术，一种新型的CMOS四值译码器与编码器被设计。
By using the multiple ion implantation technique, novel CMOS quaternary decoder and encoder are designed.
等离子体源离子注入技术是一种新型的非视线的离子注入材料表面改性技术。
Plasma source ion implantation is a new non-line of sight ion implantation technique for surface modification of materials.
基于氢离子注入技术和典型电化学阳极浸蚀法制备了多孔硅有图(PS)薄膜。
Patterned porous silicon (PS) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method.
利用离子注入技术，对稀土掺杂到半导体单晶硅中的光致发光行为进行了研究。
The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique.
论述金属离子注入技术在改善材料的疲劳、耐磨性、 氧化等性能方面的应用。
The application of metal ion injection technology for improving metal fatigue resistance and erosion resistance are discussed.
叙述了离子注入技术的特点，着重介绍了其在高分子材料表面改性中的机理和应用。
The characteristics of ion implantation is described, and the mechanism and application of ion implantation on surface modification of high polymer material is outlined.
报道了利用离子注入技术研制出一种用于手机的超低插损砷化镓单片射频单刀双掷开关。
An ultra low insertion loss GaAs MMIC RF SPDT switch based on full-ion-implantation technology is reported.
本文介绍离子注入技术对气敏材料表面层组分、结构、电导率及气敏特性进行改性的研究进展。
In this paper we introduce the researches on ion implantation. modification of surface layer composition, construction, conductivity and gas sensitive characterization of gas sensitive materials.
该文通过离子注入在金属防腐、电极改性方面的应用，来说明离子注入技术在金属表面处理中的优越性。
In this thesis, its superiority in metal surface treatment was explained with applications of ion implantation in metal corrosion and electrode characteristics improvement.
就目前而言，已有的离子注入技术(包括离子注入设备系统)尚不能满足甚亚微米器件和电路制造的需要。
Now, the present ion implantation technology, especially ion implantation equipment and systems, can not meet the needs in the manufacturing of deep submicron devices and circuits.
迄今为止，人们已经利用离子注入技术在光学晶体、玻璃、半导体以及有机聚合物等大量光学材料中形成了光波导结构。
Up to now, many waveguide structures have been formed by ion implantation in various materials such as optical crystals, glasses, semiconductors and polymers, etc.
本项研究在一定程度上证实了离子注入技术在创造多倍体水稻新种质申的实用性，这将为水稻无融合生殖种质材料的寻找提供一条新途径。
The results revealed the practicability of ion beam implantation technique in creating new polyploidy idioplasm, which could provide a new approach for searching the material with apomixis.
对渗碳和离子注入两种工艺方法和作用进行了介绍，并对两种工艺方法进行了一定的比较，重点对近年来广泛应用的离子注入技术进行了推介。
Introducing the technics and effect of cementite and ion implantation, comparing the two technics, and recommending the ion importation techniques specially being widely used in recent years.
阐述了国内离子注入金属材料改性技术所取得的研究成果及国外的研究概况；
The domestic research achievement on new technology of ion implanting of metal material and studies made abroad are described.
综述了镁合金表面处理技术的工艺进展，主要包括化学转化膜、阳极氧化、微弧氧化、金属涂层、离子注入等技术。
The process progress for magnesium alloy surface treatment technology include conversion coating, anodizing, micro-arc oxidation, electrochemical plating, ion implantation etc was summarized.
简单介绍了典型离子注入机的组成，分析了离子注入机中扫描技术的重要性。
Introduced the configuration of typical ion implanter, analyzed the importance of the implantation mechanical scanning technology.
并讨论了表面改性技术如热喷涂、激光、离子注入等非平衡处理技术对陶瓷材料的改性。
And discussed ceramic materials modification by surface modification processes such as thermal spraying, Laser, ion implantation and other non-equilibrium treatments.
用等离子体浸没离子注入与沉积（PIIID）复合强化新技术在AISI52100轴承钢基体表面成功合成了硬而耐磨的氮化钛薄膜。
Titanium nitride(TiN) hard protective films were fabricated on AISI52100 bearing steel surface employing plasma immersion ion implantation and deposition(PIIID) technique.
报道了用氦离子注入智能剥离形成SOI结构硅片的新技术，介绍了这种技术的工艺和用剖面透射电镜研究的结果。
A new technology of smart cut using helium ion implantation to form SOI was presented. The process of smart cut was introduced and research results was demonstrated by means of XTEM in this paper.
采用两种方法进行钛离子注入硅，RBS方法分析注入层，并对两种注入技术予以比较。
The RBS was used to analyze the implanted layers and two techniques were compared.
离子注入是一种新型的作物诱变技术。离子注入不仅损伤轻，而且突变率高，突变谱广并可定向引变。
Ion implantation as a new mutagen caused high mutation rate and wide mutational spectrum with low damage, and it was also mutated in the direction.
离子注入生物效应的发现开拓了低能离子束技术在生物学中应用的新领域，形成了一个新的交叉学科——低能重离子生物学。
However, the discovery of bioeffects induced by ion beam implantation has opened a new branch in the field of ion beam applications in the life science-low-energy Heavy ion Biology.
离子注入生物效应的发现开拓了低能离子束技术在生物学中应用的新领域，形成了一个新的交叉学科——低能重离子生物学。
However, the discovery of bioeffects induced by ion beam implantation has opened a new branch in the field of ion beam applications in the life science-low-energy Heavy ion Biology.
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