披露是生产的氮化铝超细粉加工。
Disclosed is a process for producing an ultrafine powder of aluminum nitride.
文章主要介绍氮化铝陶瓷基片生产的关键技术。
The technology of AlN ceramic substrate volume production is introduced in this paper.
采用改进的升华法在氮气环境下制备氮化铝单晶体。
AlN crystals were grown by modified sandwich sublimation method in nitrogen atmosphere.
但用高能球磨直接氮化合成氮化铝的方法尚未报道。
However, there has not article about direct synthesis of aluminum nitride in high-energy ball mill.
讨论了温度梯度对氮化铝晶体尺寸大小和形态的影响。
The influence of the temperature gradient on the size and morphology of the crystals was discussed.
而且在热轧过程期间的应变及降温也会使氮化铝析出。
Further, during hot rolling process some amount of fine AlN precipitates at different stages because of strain and decrease in temperature.
氮化铝(ain)是一种重要的近紫外、蓝光半导体材料。
Aluminum nitride is an important semi conductive material used in the blue and near ultraviolet band.
氮化铝的热膨胀系数与硅的十分接近，因此不会引入大的热应力。
Since coefficients of thermal expansion between aluminum nitride and silicon are near, large thermal stress will not be introduced.
氮化铝是钢中存在的一种非金属夹杂物，对钢材性能有一定的影响。
AlN is a sort of non-metal inclusion in steel, it affects the performance of steel to a certain degree.
抗水解的机理是在氮化铝表面形成一种ZJ-1和铝的化合物保护膜。
Mechanism of antihydrolysis is forming a protecting film of compound of aluminium and the surface treatment agent ZJ 1.
利用融盐热歧化反应进行了氮化铝陶瓷表面钛金属化沉积的动力学研究。
The kinetics of titanium deposition on AlN ceramic surface by heat disproportional reaction was studied.
实验发现，在坩埚的不同区域得到的氮化铝晶体的大小和形态有所不同。
It was found that the AlN crystals which were grown on different regions in the crucible exhibit different crystal habits.
实验中通过控制条件得到了棒状、片状、球状和多孔形貌的氮化铝粉末。
We obtained rods, flakes, spheres, porous aluminum nitride by control of synthesis conditions, respectively.
系统地研究了流延法制备氮化铝基片过程中影响流延浆料粘度的主要因素。
Effects on the rheological behavior of slurry for tape-casting aluminum nitride substrate were studied systematically.
采用直流电弧等离子体蒸发-凝聚法制备了高纯氮化铝(ain)纳米粉末。
Nanosize aluminium nitride (AIN) powder was prepared by evaporating and nitriding high purity aluminium in DC arc plasma reactor.
本文研究了用电解溶解试样的方法对钢中氮化铝进行测定，其结果准确性是满意的。
The method to electrolyze the sample to make it dissolved to determine AlN in steel was studied and the result satisfied.
本发明提供即使是像氮化铝那样介质损耗因数极小的陶瓷也高效且牢固地接合的方法。
Provided is a method of efficiently and strongly joining ceramics even when they are ceramics of extremely low dielectric loss factor, such as aluminum nitride.
在602 ~ 720ghz频率范围内，氮化铝具有更好的均匀性、更高的灵敏度和良好的性能。
An aluminium nitride layer proves to be much more homogeneous and its sensitivity, in the 602 to 720 GHz range, is also much improved.
采用完全相同的半导体激光器结构，金刚石膜热沉的热阻仅为氮化铝热沉的4 0 %。
Using a same semiconductor laser scheme, the thermal impedance of diamond thermal management is only 40% of AlN thermal management.
综述了各种沉积条件对磁控溅射技术生长氮化铝薄膜的微观结构，电学以及光学性能的影响。
Reviewed were the effects of various deposition conditions on microstructural, electrical and optical properties of AlN films grown by magnetron sputtering deposition technology.
该方法避免了降温过程中热应力造成的晶片破裂问题，尤其适于氮化镓、氮化铝衬底的制备。
The method avoids the problem that the wafer break is caused by thermal stress in the course of cooling down, especially is suitable for preparing gallium nitride and aluminum nitride substrates.
研究者们利用一块镀铝的氮化铝微小跳板代替了光束，跳板上的铝层通过变薄和变厚来进行振动。
Instead of a beam, they fashioned a tiny diving board of aluminum nitride plated with aluminum that vibrated by getting thinner and thicker.
对在加压氮气中金属铝粉的直接氮化和氧化铝粉的碳热还原氮化法制备氮化铝粉末进行了研究。
The preparation of aluminium nitride powder by means of direct nitridation under pressurized nitrogen atmosphere and carbothermal nitridation of alumina is studied.
采用微波碳热还原法制备了氮化铝粉末，研究了铝源、碳源和添加剂对制备氮化铝粉末的影响。
The effects of aluminium sources, carbon sources and additives on AlN powder structure and morphology were studied.
该方法主要包括三个部分：（1）利用放电等离子烧结技术实现氮化铝陶瓷的较低温度烧结；
The method comprises: (1) sintering aluminum nitride ceramic at a low temperature by plasma-discharging sintering;
评估结果表明，用直流等离子体氮化金属铝的特种制粉工艺所制备的超细氮化铝粉主相量已达95%。
The results of the evaluation have shown that the main phase quantity of ultrafine AlN powder prepared by the special powder manufacture, DC plasma nitridation of metallic aluminium have reached 95%.
可用于海洋敏感器件封装的氮化铝陶瓷材料具有高的热导率特性，本文对它的热导率进行了实验研究。
AIN ceramic material with high thermal conductivity, it can be used as the enclosure material for sea temperature sensor.
多层共烧氮化铝陶瓷是采用厚膜印刷的方式将多层的电路金属化做入氮化铝基板并在特定气氛中高温烧结的一种高性能陶瓷。
Multilayer co-fired AlN ceramic is a type of high performance ceramic that is printed in thick film to form multilayer circuit and fired in a certain atmosphere in high temperature.
结果表明：在较低压力沉积的氮化铝薄膜有良好的择优取向性；氮化铝薄膜残余应力为压应力，且随气体压力增加而逐渐变化。
Results show that AlN films deposited at low gas pressure have good selective orientation, and compressive residual shes increased with gas pressure is found in the films.
研究结果表明，由于制备时的生长条件极不稳定，出现不同形态的晶须形貌，除了细长均匀的氮化铝晶须外，还出现了各种其它不规则形状的产物。
Due to unsteady of growth conditions, different morphologies were observed in the whiskers, except thin, long, and even AlN whiskers, several products with irregular shapes occur.
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