机械晶体管，更确切地可以称之为纳米电子机械系统（NEMS）晶体管，它可以在源极和漏极之间机械地构建或消除连接。
The mechanical transistor, more properly called a nano-electromechanical systems (NEMS) transistor, creates and destroys the connection between source and drain mechanically.
拥有更低峰值电流和场效应晶体管漏源极开通电压的800伏特准谐振设计展示出一次侧传导电磁干扰降低的优势。
The 800v quasi resonant design with lower current peak and lower drain-source voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.
机械晶体管，更确切地可以称之为纳米电子机械系统晶体管，它可以在源极和漏极之间机械地构建或消除连接。
The mechanical transistor, more properly called a nano-electromechanical systems transistor, creates and destroys the connection between source and drain mechanically.
漏源极电压（图28）在反射过程结束后并减小到100伏特时场效应晶体管导通。
The drain-source voltage (Fig. 28) starts oscillating at the end of the flyback phase and reaching the minimum of 100V when the MOSFET turns on.
长期以来，解决微波功率晶体管的电流集中问题的通用做法是使用发射极镇流电阻，以及PTC,CTR热敏电阻等无源器件。
For a long time, a common and popular method to solve current convergence problem of microwave power transistor is using emitter ballasting resistor, such as PTC, CTR thermistor, passive devices etc.
相应地，该晶体管的阈值电压及栅源极电压也可降低。
Accordingly, threshold voltage as well as voltage of grid and source pole of the transistor also can be lowered.
通常由一个电阻器或者电流源，电容器和一个“阀门”装置，如氖灯、两端交流开关、单结晶体管或者耿式效应二极管来实现。
It is usually implemented with a resistor or current source, a capacitor, and a "threshold" device such as a neon lamp, diac unijunction transistor, or Gunn diode.
NAND串的一个端子经由选择晶体管SGD连接到相应的位线，且另一端子经由第二选择晶体管s GS连接到c源极线。
One terminal of the NAND string is connected to a corresponding bit line via a select transistor SGD, and another terminal is connected to the c-source line via a second select transistor SGS.
NAND串的一个端子经由选择晶体管SGD连接到相应的位线，且另一端子经由第二选择晶体管s GS连接到c源极线。
One terminal of the NAND string is connected to a corresponding bit line via a select transistor SGD, and another terminal is connected to the c-source line via a second select transistor SGS.
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