本发明还提供了一种获取非挥发存储器中失效二进制位地址分布信息的装置。
The invention further provides a device for obtaining the address distribution information of failure bits in non-volatile memory.
在铁电不挥发存储器(FERAM)技术中，集成铁电电容的制备是关键工艺之一。
For fabricating the nonvolatile ferroelectric memories (FERAM), one of the keys is to make the integrated ferroelectric capacitors.
随着便携式电子设备的不断普及，人们对于高密度、高速度、低功耗以及低成本的非挥发存储器的需求也在与日俱增。
With the growing popularity of portable electronic devices, people's requirement for high-density, high-speed, low-power and low-cost nonvolatile memory is also increasing.
针对目前多位非挥发存储器存在的编程功耗大、比特间串扰严重、编程窗口小等缺陷，本论文提出一种新型多位非挥发存储器件结构。
Due to the disadvantages of recent multi-bit memory, for example high programming power, cross talk between two bits, small programming window, et al, a novel multi-bit memory device is proposed.
在各种新型非挥发性存储器中，阻变存储器(RRAM)具有成为下一代存储器的潜力。
Resistive random access memory (RRAM) is one of the most promising candidates for next generation of non-volatile memory.
论文从系统级、模块级、电路级和物理级对非挥发性存储器芯片设计中的关键设计技术进行了研究。
In this paper, we design this non-volatile memory chip in system level, module level, circuit level and physical level.
铁电阵列在红外探测器、非挥发性存储器中具有重要应用。
Ferroelectric arrays have promising applications in the infrared detectors and non-volatile ferroelectric memories.
通过这种方法制备的胶体金量子点浮置栅MOS结构可以在非挥发性存储器研究方面展现巨大的应用前景。
The present results indicate that this technique is promising for the efficient formation of metal nanoparticles inside MOS structures.
通过这种方法制备的胶体金量子点浮置栅MOS结构可以在非挥发性存储器研究方面展现巨大的应用前景。
The present results indicate that this technique is promising for the efficient formation of metal nanoparticles inside MOS structures.
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