但由于绝缘埋层的引入，使得材料本身的抗总剂量辐照能力反而不如体硅材料。
But due to an insulating layer in its structure, the tolerance of total dose irradiation of SOI is poorer than normal silicon material.
但由于绝缘埋层的引入，使得材料本身的抗总剂量辐照能力反而不如体硅材料。
But due to an insulating layer in its structure, the tolerance of total dose irradiation of SOI is poorer than normal silicon material.
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