本发明属于微电子器件技术领域，具体为一种形成超薄可控的金属硅化物的方法。
The invention belongs to the technical field of microelectronic devices, in particular to a method for forming ultrathin controllable metal silicide.
本发明属于微电子技术领域，具体公开了一种刻蚀铜的方法。
The invention belongs to the technical field of microelectronics, and in particular discloses a method for etching copper.
本发明公开了一种多阻态电阻随机存储器单元及其制备方法，属于微电子技术领域。
The invention discloses a multi-resistance state resistor random-access memory unit and a preparation method thereof, and belongs to the technical field of microelectronics.
本发明属于微电子技术领域，具体公开了一种PN结和肖特基结混合式二极管及其制备方法。
The invention belongs to the technical field of microelectronics, and in particular discloses a PN (positive-negative) junction and Schottky junction mixed type diode and a preparation method thereof.
本发明属于微电子器件技术领域，具体公开了一种不对称型源漏场效应晶体管及其制备方法。
The invention belongs to the technical field of a microelectronic device, and more particularly discloses an asymmetrical source-drain field effect transistor and a preparation method thereof.
本发明属于微电子技术领域，具体涉及一种用标准集成电路工艺片设计的高性能叠层结构差分驱动的对称电感。
The invention belongs to the field of micro electronic technique, concretely relating to a high performance stacked differential symmetrical inductance designed by standard IC process piece.
本发明涉及一种增加变形梁强度和使用寿命的结构及其应用，属于微电子机械系统(MEMS)领域。
The invention relates to a structure for increasing strength and service life of a deformable beam and an application thereof, belonging to the field of micro-electronic mechanical system (MEMS).
本发明属于微电子学与固体电子学领域的超大规模集成电路设计，是一种采用电感实现的射频信号集成静电释放保护电路。
The invention belongs to SLSI design of field of microelectronics and solid electronics; it is a radio-frequency signal integration static release protecting circuit realized by inductance.
本发明属于微电子学与固体电子学领域的超大规模集成电路设计，是一种采用电感实现的射频信号集成静电释放保护电路。
The invention belongs to SLSI design of field of microelectronics and solid electronics; it is a radio-frequency signal integration static release protecting circuit realized by inductance.
应用推荐