射频辉光放电等离子体在微电子及半导体薄膜材料生长等方面有着广泛的应用。
Plasma in radio frequency (rf) glow discharge is widely used in the preparation of semiconductor film materials and microelectronic industry.
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon (a-Si: h) films.
本文首先对比研究了两种以氧气作为放电气体的等离子体：电感式射频辉光等离子体(RF)和介质阻挡放电等离子体(DBD)氧化纳米炭黑的工艺。
Firstly, it was contrastively studied that the nanometer carbon black was oxidized by two kind of oxygen plasma: radio frequency discharge (RF) and dielectric barrier discharge (DBD).
本文首先对比研究了两种以氧气作为放电气体的等离子体：电感式射频辉光等离子体(RF)和介质阻挡放电等离子体(DBD)氧化纳米炭黑的工艺。
Firstly, it was contrastively studied that the nanometer carbon black was oxidized by two kind of oxygen plasma: radio frequency discharge (RF) and dielectric barrier discharge (DBD).
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