半导体具有不同于导体和绝缘体的特性。
Semiconductors have properties different from those of conductors and insulators.
电荷的大小不仅取决于导体和绝缘体，还取决于它们的几何构造。
How big that charge is depends on the materials from which conductors and insulator are made, and also on their geometric configuration.
实际上并没有一个明显的界限将半导体和绝缘体分开。
There is no sharp line separating conductors from insulators .
实际上并没有一个明显的界限将半导体和绝缘体分开。
There is no sharp line separating conductors from insulators.
半导体：一类晶体材料，其电导率介于导体和绝缘体之间。
Semiconductor: Class of crystalline solids with electrical conductivity between that of a conductor and an insulator.
氧化锌纳米颗粒的导电能力介于导体和绝缘体之间是一种典型的半导体。
ZnO nanoparticle is a typical semiconductor Electric conductivity of which is between that of conductors and that of insulators.
它可以在超导体（一种能导电的材料）和绝缘体（一种不导电的材料）之间转变。
It can change between a superconductor a material that conducts electricity, and an insulator a material that doesn't conduct electricity
这项工作须检查轴承组件的安全性和绝缘体以及导体的完整性。
Inspection should verify safety of bearing assemblies and integrity of insulators and conductors.
所以在构建测试夹具和进行弱电流及高阻抗连接时，尽量减少绝缘体之间及导体之间的接触也是很重要的。
Therefore, it's important to minimize contact between insulators as well as conductors in constructing test fixtures and connections for low current and high impedance.
当拉出钻头时，横梁(上面缠有绝缘体和导体的金属结构)将它架起，形成一个新的支架。
While pulling out the drill, crossbeams (metal structures on which insulators and conductors are mounted) are attached to a new support.
研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
半导体是导体之间，那里的电力可以自由流动，以及绝缘体，其中电子的约束紧密其原子和不自由流动。
A semiconductor is in between a conductor, where electricity can flow freely, and an insulator, where electrons are bound tightly to their atoms and do not flow freely.
绝缘体和导体向来都站在对立面，绝缘体中的电子被紧紧束缚在原子上，因此没有电流能够通过。
After all, insulators are the very opposite of conductors: their electrons are tightly bound to atoms and the material resists the flow of electrical current.
馈电器可以有多种设置方式，其中优选是使馈电器通过绝缘体穿过金属外壳且馈电器两端分别与金属外壳和管状导体相连接。
The feeders may be set in different modes, and are preferably connected to both the metal casing and one tubular conductor through insulator in the metal casing.
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
借由使用高介电常数介电质和高功函数的铱电极，我们达成满足国际半导体技术蓝图所需求性能的高性能金属-绝缘体-金属电容。
By using the high-k TiTaO dielectric an1d the high work-function ir electrode, we have exhibited a high performance MIM capacitor that meets the ITRS roadmap requirements for analog capacitors.
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