• 反向偏压以及CMOS工艺介质钝化等因素探测器响应度的影响进行了讨论

    The responsivity dependent on the insulated medium and passivation layers in CMOS process and reverse bias is also discussed.

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  • 通过未选中施加正向偏压、未选中上施加反向偏压的方法,有效地抑制了交叉效应。

    The crosstalk is overcome by using forward voltage on inactive rows and inverse voltage on inactive columns.

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  • 位移电流机理反向偏压维持空间电荷需要的非常正向偏压条件下电容器才有用。

    The displacement current mechanism is operative only for capacitors under reverse bias or very weak forward bias conditions which maintain a space-charge layer .

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  • 结果表明,相对理想情形,特性曲线反向偏压漏电因深能级穿偏;正向小偏压沿着位错汇聚金属产生漏电流

    It is found that in the backward voltage segment of the I-V curve the leakage current is larger because of deep-level-assistant tunneling;

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  • 首先进行必要的直流测试例如正向偏压反向击穿电压

    The SourceMeter instrument first performs the necessary DC tests, such as forward voltage, reverse breakdown voltage, and leakage current.

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  • 黑线表示没有偏压红线表示一个反向电压

    Black lines are without external bias and red lines are with and external reverse bias voltage.

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  • 黑线表示没有偏压红线表示一个反向电压

    Black lines are without external bias and red lines are with and external reverse bias voltage.

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