研究结果表明:在高温段2DEG 的迁移率主要受LO声子散射限制;在室温,异质界面处的非均匀压电极化场对2DEG。
The results indicate that the 2DEG mobility is primarily limited by LO phonon scattering processes at high temperatures.
研究结果表明:在高温段2DEG 的迁移率主要受LO声子散射限制;在室温,异质界面处的非均匀压电极化场对2DEG。
The results indicate that the 2DEG mobility is primarily limited by LO phonon scattering processes at high temperatures.
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