它由两层半导体晶硅材料合在一起夹在金属接触器之间。
It is composed of two layers of semiconductor material, typically silicon, that are sandwiched together between metal contacts.
在LED电极欧姆接触中，载流子在金属电极和半导体间有不同的传输机制。
In the Ohmic contacts of LED electrodes, carriers have different transmission mechanisms be - tween metal electrode and semiconductor.
一种半导体器件(10)，具有在最后的互连层(16)和接合焊盘之间的接触，该接合焊盘包括接合焊盘(28)和最后的互连层(16)之间的阻挡金属(26)。
A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16).
本文评述了金属-半导体接触的各种机理以及这个接触在半导体枝术中的实际应用。
The paper describes the mechanisms of metal-semiconductor contact and the actual applications of this contact in semiconductor technology.
该半导体组件还包括涂覆金属(36)，该涂覆金属位于绝缘体的至少一部分之上并互相连接背面接触垫。
The semiconductor assembly further includes metallization (36) situated over at least a portion of the insulation and interconnecting the backside contact pads.
本文提出一种用直线四探针头测量金属-半导体欧姆接触接触电阻率的简捷方法。
In this paper, a simple method to measure the specific contact resistance of metal-semiconductor ohmic contact is developed, using the probe heads of the inline four probes.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
本文中提出了一种测量金属-半导体欧姆接触比接触电阻的新方法-圆环结构测试法。
In this paper, a method to determine the specific contact resistance of metal-semiconductor contact — circular ring structure method is presented.
本文中提出了一种测量金属-半导体欧姆接触比接触电阻的新方法-圆环结构测试法。
In this paper, a method to determine the specific contact resistance of metal-semiconductor contact — circular ring structure method is presented.
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