本文评述了金属-半导体接触的各种机理以及这个接触在半导体枝术中的实际应用。
The paper describes the mechanisms of metal-semiconductor contact and the actual applications of this contact in semiconductor technology.
本文描述使用以阻抗测量仪为中心的正偏电容测量系统提取金属-半导体接触界面态参数的方法。
This paper presents a forward-bias capacitance measurement system based on HP 4274AL-C-R meter for extracting the parameters of interface states of metal-semiconductor contacts.
它由两层半导体晶硅材料合在一起夹在金属接触器之间。
It is composed of two layers of semiconductor material, typically silicon, that are sandwiched together between metal contacts.
在LED电极欧姆接触中，载流子在金属电极和半导体间有不同的传输机制。
In the Ohmic contacts of LED electrodes, carriers have different transmission mechanisms be - tween metal electrode and semiconductor.
利用红外辐射测温原理，设计成半导体基片上激光焦斑温度不接触测量系统。
With IR temperature-measuring principle, a non-contact measuring system for measuring laser spot temperature on semiconductor substrate is designed.
欧姆接触的好坏，对高功率半导体激光器至关重要。
Ohmic contact is a critical factor for high power semiconductor lasers.
一种半导体器件(10)，具有在最后的互连层(16)和接合焊盘之间的接触，该接合焊盘包括接合焊盘(28)和最后的互连层(16)之间的阻挡金属(26)。
A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16).
电流在与电解质接触的半导体材料的一或多个表面上形成多孔层。
The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte.
半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。
The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.
利用连续发射的激光光源和半导体光电位置敏感器件，设计了一种三维非接触高精度的光学测量系统。
Using the continuous sending laser light source and semiconductor photoelectric position sensitive device, a high accurate tri-dimensional non-contact optical measurement system is designed.
该半导体组件还包括涂覆金属(36)，该涂覆金属位于绝缘体的至少一部分之上并互相连接背面接触垫。
The semiconductor assembly further includes metallization (36) situated over at least a portion of the insulation and interconnecting the backside contact pads.
本文报导了用微波介质波导反射法无接触测量半导体电阻率的实验装置。
We have designed a contactless measurement apparatus by a microwave dielectric waveguide reflection method.
本发明对底电极的修饰采用沟道半导体材料本身，减小了电极与沟道材料之间的接触电势差。
The channel semi-conductor material is adopted to adorn the bottom electrode, so the contact potential difference between the electrode and the channel material can be reduced.
为了设计以半导体异质结构量子点接触(QPC)为基础的器件，需要掌握QPC结构中静电势的分布及其控制方法。
In order to design the quantum point contact (QPC) devices based on the semiconductor heterostructure, electrostatic potential distribution and control methods of the QPC are needed to be considered.
本文提出一种用直线四探针头测量金属-半导体欧姆接触接触电阻率的简捷方法。
In this paper, a simple method to measure the specific contact resistance of metal-semiconductor ohmic contact is developed, using the probe heads of the inline four probes.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
本文中提出了一种测量金属-半导体欧姆接触比接触电阻的新方法-圆环结构测试法。
In this paper, a method to determine the specific contact resistance of metal-semiconductor contact — circular ring structure method is presented.
当前社会生活中使用的IC卡主要为非接触式的IC卡，非接触式IC卡是现代信息工程、半导体工业领域中的一个热点。
At present the non-contact IC CARDS are the main IC CARDS used in our social life. contactless IC card is a modern engineering, the semiconductor industry in the field of a hot.
当前社会生活中使用的IC卡主要为非接触式的IC卡，非接触式IC卡是现代信息工程、半导体工业领域中的一个热点。
At present the non-contact IC CARDS are the main IC CARDS used in our social life. contactless IC card is a modern engineering, the semiconductor industry in the field of a hot.
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