福禄克113的可以执行二极管测试，还提供了自动和手动等功能。
The Fluke 113 can perform diode tests, and also provides both auto and manual ranging capabilities.
如果您不知道或错误的测试二极管，你将无法修复的设备。
If you do not know or wrongly test a diode you will be unable to repair the equipment.
方形光二极管阵列包括四个集成在通用磷化铟（InP）衬底上的光二极管单片集成电路，采用低制造、集成与测试率的铟镓砷化物/磷化铟半导体工艺制造。
The Quad PD Arrays consist of four photodiodes monolithically integrated on a common indium phosphide (InP) substrate, and are fabricated using a low FIT rate InGaAs/InP semiconductor process.
在很多测试应用中，二极管的电压和发出的光可以利用大小固定的电流源同时测出来。
In many test applications, the voltage and light output of the diode can be measured simultaneously using a fixed source current value.
被测件放在测试夹具里，如二极管、晶体管、微带电路等。
DUT is placed in test fixture such as diode, transistors, microstrip circuit and so on.
设计制作出一个幅值可调的恒流源及其测试系统，实现稳压二极管电压漂移参数的检测，至关重要。
To design and manufacture a constant-source with adjustable amplitude value and the test system, and to realize the examination of zener diode voltage drift parameter, is very important.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
测试结果表明：选择LM 317作稳压器，PIN光电二极管作探测器，采用I V光电转换连接光电探测器与放大器的方式，可以满足设计要求。
It is shown that choosing LM317 to be the manostat, the PIN diodes to be the photodetector, and the I-V transformation to be the connective mode, the designing index can be fulfilled.
改造后能较大程度地改善以上缺陷，达到测试SOD二极管目的。
After reconstruction can greatly improve the bugs above, to test SOD diode purpose.
介绍了半导体激光二极管（LD）寿命测试中存在的问题，并据此给出了LD高温加速寿命测试的积分球扫描法。
The problems of laser diode life test are introduced, and the integrating cavity scanning (ICS) method is given in laser diodes (LD) high-temperature accelerating life test.
利用光敏三极管代替硅光电池和光敏二极管来测试单缝和双缝衍射的光强分布。
This paper introduces a new method to measure the intensity distribution of single seam diffraction by replacing the silicon photocell and light activated diode with light activated triode.
由于开关损坏的主要原因是过热损坏，对PIN二极管进行热阻和功耗测试以准确估计器件的内部温升是非常必要的。
Over hot is the main reason of PIN switches 'failure, therefore thermo-resistance and device dissipation power measurement to estimate the inner temperature accurately is necessary dramatically.
测试结果表明，沉积六硼化镧薄膜后的二极管发射性能与纯硅尖相比具有明显增强。
The results show that thin film with deposition of LaB6 in the diode can markedly improve the emission properties compared with pure silicon tip.
测试结果表明，此类快恢复二极管具有反向恢复时间短、软度大、反向漏电低的优良特性，在国际上处于领先水平。
The experiment results show that this kind of diode have fast reverse recovery time, large reverse softness and low reverse leakage.
此外还观察到，在较低的测试频率和较大的正向电压下，激光二极管的结电容具有负值。
A negative capacitance effect in LDs is also observed under larger voltages or lower frequencies.
通常这样的二极管能通过试验台测试，安装到交通工具上就坏了，所以“芯片型”二极管需全部换新。
Frequently these diodes will pass all bench tests and then fail after installation on the vehicle. 100% replacement of all "Chip type" diodes is required.
通常这样的二极管能通过试验台测试，安装到交通工具上就坏了，所以“芯片型”二极管需全部换新。
Frequently these diodes will pass all bench tests and then fail after installation on the vehicle. 100% replacement of all "Chip type" diodes is required.
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