在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
只有一个外部晶体管所需的变容二极管，线路驱动。
Only one external transistor is required for varactor-line driving.
这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。
These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.
掺杂质，掺质剂加入纯半导体材料中的少量硼等物质，用于晶体管和二极管中以改变半导体的。
A substance, such as boron, added in small amounts to a pure semiconductor material to alter its conductive properties for use in transistors and diodes.
被测件放在测试夹具里，如二极管、晶体管、微带电路等。
DUT is placed in test fixture such as diode, transistors, microstrip circuit and so on.
半导体用于制作像二极管、晶体管以及集成电路等电子器件。
Semiconductors are used in the manufacture of electronic devices such as diodes, transistors, and integrated circuits.
很多工程师把纳管看作硅的替代品，当今，晶体管、二极管和其他半导体器件通常都是制作在硅这种介质上。
Many engineers see nanotubes as an alternative to silicon, the medium in which transistors, diodes and other semiconductor device structures are usually built today.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
具备基本的晶体管、电阻器、电容器和二极管知识。
Understing basic characteristics of transistor, resistor, capacitor diode.
碳化硅晶体管将增长与二极管并联，通过光伏逆变器驱动，预测报告。
SiC transistors will grow in parallel with diodes, driven by PV inverters, forecasts the report.
通过给晶体管增加一些电容、二极管和电阻，使用保持时间可调的复位IC，将纯手动复位转换为自动复位。
By adding a transistor with some capacitors, diodes, and resistors, you can transform a pure-manual reset to an automatic reset with adjustable hold time for the reset IC.
电容器、晶体管、二极管、电阻、熔断丝等编带封装料。
Capacitors, transistors, diodes, resistors, fuse, and so on Tape packaging materials.
这种电路的每一支路中的元件，除一般电路元件外，还可能包括功率开关晶体管、二极管或隔离变压器的一个绕组。
Each of the converter circuit branches may contain a power switching transistor, a diode or a winding of an isolated transformer in addition to general circuit components.
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
该化合物可以用于电子器件，如有机薄膜晶体管(OTFT)，显示器件，发光二极管，光伏电池，光检测器和存储单元。
The compounds can be used in electronic devices such as organic thin film transistors (OTFTs), display devices, light-emitting diodes, photovoltaic cells, photo-detectors, and memory cells.
在供应电压与耗乏型晶体管之间可设置一个二极管。
A diode can be arranged between the supply voltage and the depleted type transistor.
通常由一个电阻器或者电流源，电容器和一个“阀门”装置，如氖灯、两端交流开关、单结晶体管或者耿式效应二极管来实现。
It is usually implemented with a resistor or current source, a capacitor, and a "threshold" device such as a neon lamp, diac unijunction transistor, or Gunn diode.
你也应该剪辑一aligator剪辑上率先你是焊接时，焊接半导体(晶体管，MOSFET管，二极管，集成电路)。
You should also clip an aligator clip onto the lead you are soldering when soldering a semiconductor (transistor, MOSFET, diode, IC).
一支放大的晶体管然后检查剩余电压在这个二极管，并且这个二极管再被再充电。
An amplifying transistor then checks the remaining voltage on the diode, and the diode is recharged again.
本文叙述采用双栅砷化镓场效应晶体管和高优值硅外延变容二极管实现UHF电子调谐器低噪声化的有关设计和实验结果。
This paper reports the design and experiments of the low noise UHF electronic tuner consisting of a low noise dual-gate FET and a high merit silicon epitaxial varactor.
第一代的调谐器芯片、射频晶体管和二极管需要高达12至15伏的供电电压。
The first tuner semiconductors, RF transistors and diodes, used supply voltages of as high as 12 to 15V.
晶体管门电路比起二极管门电路来有一个显著的优点，那就是晶体管除了起门的作用外还能够放大。
The transistor gate has a distinct advantage over the diode gate in that the transistor amplifies, as well as acts as a gate.
谐振峰是限制激光二极管性能的因素之一，而在这种晶体管激光器结构中，没有观察到明显的谐振峰。
No remarkable resonance peak, limiting factor in laser diodes, is observed during this modification in transistor laser structure.
谐振峰是限制激光二极管性能的因素之一，而在这种晶体管激光器结构中，没有观察到明显的谐振峰。
No remarkable resonance peak, limiting factor in laser diodes, is observed during this modification in transistor laser structure.
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