Cathode is one of the core components of vacuum microelectronic devices.
阴极是真空微电子器件的核心部件之一。
This paper describes a fabrication technology of metal tip field emission arrays (FEA) for the vacuum microelectronic devices.
本文介绍了真空微电子器件场发射金属尖阵列阴极的制备工艺技术。
Compared with semiconductor devices, vacuum microelectronic devices can work with higher frequency and larger power at a wider range of temperature.
真空微电子器件相对于半导体器件来说，有着更高的工作频率和输出功率，正常工作温度范围也相对较大。
A process for the fabrication of Si cone cathode for the build up of vacuum microelectronic devices is proposed and its experimental results are given.
本文介绍了利用半导体硅材料制作的真空微电子器件的核心部件，场致发射硅锥阴极，的工艺研究及实验结果。
A process for the fabrication of Si cone cathode for the build up of vacuum microelectronic devices is proposed and its experimental results are given.
本文介绍了利用半导体硅材料制作的真空微电子器件的核心部件，场致发射硅锥阴极，的工艺研究及实验结果。
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