In a drive system of power transistor inverter-motor, not only can it be used in fine control of motor current waveform, phase, amplitude and frequency, but can also be used to sense, fault current.
在大功率晶体管逆变器——电动机驱动系统中，它不但可用来对电动机电流的波形、相位、幅值和频率进行精细控制，而且能快速地检测出故障电流。
The objective of this design is to a broadband microwave power transistor used in broadband solid state amplifier.
本设计的目的是建立一个用于宽带固态放大器的宽带微波功率晶体管。
The choice engineers face is thus between supplying continuous power to a transistor, so that it can retain its memory.
因此，工程师们面临的选择就是要么对晶体管提供一个持续的电源，让晶体管保持自己的记忆。
For a long time, a common and popular method to solve current convergence problem of microwave power transistor is using emitter ballasting resistor, such as PTC, CTR thermistor, passive devices etc.
长期以来，解决微波功率晶体管的电流集中问题的通用做法是使用发射极镇流电阻，以及PTC,CTR热敏电阻等无源器件。
PNP epitaxial silicon transistor. Low frequency power amplifier.
PNP外延硅晶体管。低频功率放大器。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
Double pole transistor in power device is major and the apply of IGBT will be more and more.
功率器件以使用双极晶体管为主，今后使用IGBT会逐渐增多。
A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time.
首次采用多晶硅发射区RCA技术制备出微波功率晶体管。
When a transistor dissipates power on work, its junction temperature distribution is commonly non-uniform.
晶体管在耗散功率时，结温分布一般不均匀。
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
有两个限制了晶体管的处理能力，功耗：平均交界处的温度和二次击穿。
The detectors may measure voltages at nodes of transistor switches of the power delivery circuit, particularly at the gates.
所述检测器可以测量所述功率输送电路的晶体管开关的节点处的电压，尤其是栅极处的电压。
The collector voltage of the switching transistor is determined by the voltage of the power network.
晶体开关管的集电极与发射极间的电压取决于电网电压。
Each of the converter circuit branches may contain a power switching transistor, a diode or a winding of an isolated transformer in addition to general circuit components.
这种电路的每一支路中的元件，除一般电路元件外，还可能包括功率开关晶体管、二极管或隔离变压器的一个绕组。
A method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.
为了在试验周期中了解晶体管的结温，提出一种在功率晶体管稳态工作寿命试验过程中结温的测量与控制方法。
This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
本文在分析了IGBT（绝缘栅双极晶体管）特性的基础上，设计了一台容量为2KVA、频率为20KHZ的高频逆变电源。
Metal wire bonding interconnection is the key means in the internal matching technology of RF power transistor.
金属键合线互连是射频大功率晶体管内匹配技术中的关键手段。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
The basic program is that in the wiper circuit the power transistor and relay are connected in series to perform drive control.
主要方案是，在刮水装置回路中串接功率三极管或继电器实行驱动控制。
This paper describes the unload circuits which are used in power transistor (SOA). RCD unload circuit and a novel unload circuit without energy losses are presented, their effects are discussed.
本文讨论了大功率晶体管在开关过程中的卸载问题，给出了RCD卸载电路及一种新颖的无损耗卸载电路，分析了卸载电路的工作过程。
The traditional methods for power transistor cant apply to power bare die due to various reasons such as high temperature and high operating currents.
由于存在高温度、大电流等问题，传统的测试与老化筛选功率管的方法不能完全适用于功率裸芯片。
Second breakdown mechanisms of bipolar power transistor is summarized.
概述了双极功率晶体管二次击穿机理。
The power dual base transistor (DUBAT) has been designed and fabricated by increasing the breakdown voltage and current capacity of the device.
在重点考虑了提高击穿电压和增大电流容量的基础上，设计并研制出功率型dubat。
Plastic capsulation power bipolar transistor exists many reliability problems due to the structure and package style.
由于其自身的结构与封装形式，塑封双极型功率管存在很多可靠性问题。
In this paper, the failure analysis of a type of high frequency power transistor is introduced.
介绍了对某型号高频大功率晶体管进行的失效分析。
A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.
介绍了一种用大功率绝缘栅极双极型晶体管(IGBT)模块SKM75GA L 123d和驱动模块EXB840设计的直流升压斩波器。
Darlington transistor is more convenience in power amplification areas because of its high power gain and high reliability.
达林顿晶体管增益大、可靠性高，尤其在大功率应用中更加简便。
The ratio of effectual emitter area to base area of a FFJ is 2-3 times greater than a usual transistor and the output power-impedance product is 5-10 times greater.
与通常晶体管相比，FFJ的有效发射极面积对基极面积之比值提高2～3倍，输出功率-阻抗乘积提高5～10倍。
The ratio of effectual emitter area to base area of a FFJ is 2-3 times greater than a usual transistor and the output power-impedance product is 5-10 times greater.
与通常晶体管相比，FFJ的有效发射极面积对基极面积之比值提高2～3倍，输出功率-阻抗乘积提高5～10倍。
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