The invention provided a semiconductor device which has a very high tamper resistance to improper analysis means due to FIB processing or the like from rear surface.
本发明提供一种半导体器件，对利用从背面进行的FIB加工等实施的不正当解析手段具有极高的抗篡改性。
The backside holes of prior art microphones typically require that a secondary machining operation be performed on the rear surface of the silicon wafer during fabrication.
现有技术中传声器的背侧孔典型地要求在制造过程中于硅片的后表面上进行一种二次机加工操作。
A laser huge pulse irradiates on aluminium plates to cause ultrasonic waves. The waveform of the rear surface displacement produced by ultrasounds is detected with optical homodyne.
激光巨脉冲在金属铝块上产生超声波，由光学零差探测得到超声引起的后表面位移的波形。
The ground potential unit includes a pair of conductors (13/14) formed in a tapered shape on the front and the rear surface of the dielectric substrate and mutually capacity-coupled.
接地电位单元包括在介质衬底的前表面和后表面上以楔形形状形成的并且相互电容性地 耦合的导体对（13，14）。
So, if ultrasonic wave is used to determine SIF, only the first one passing through the front (or rear) surface of the specimen can be used.
要用超声波确定应力强度因子，只能采用透出试件前(或后)表面的第一个纵波信号。
So, if ultrasonic wave is used to determine SIF, only the first one passing through the front (or rear) surface of the specimen can be used.
要用超声波确定应力强度因子，只能采用透出试件前(或后)表面的第一个纵波信号。
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