High-power transistor drive is not affected by high frequencies.
大功率晶体管驱动不受高频影响。
Second breakdown mechanisms of bipolar power transistor is summarized.
概述了双极功率晶体管二次击穿机理。
In this paper, the failure analysis of a type of high frequency power transistor is introduced.
介绍了对某型号高频大功率晶体管进行的失效分析。
Metal wire bonding interconnection is the key means in the internal matching technology of RF power transistor.
金属键合线互连是射频大功率晶体管内匹配技术中的关键手段。
The objective of this design is to a broadband microwave power transistor used in broadband solid state amplifier.
本设计的目的是建立一个用于宽带固态放大器的宽带微波功率晶体管。
This model will provide assistance to the optimal design of bipolar power transistor with high frequency and high…
该模型可供优化设计双极型高频、高压、低饱和压降功率器件参考。
Use them virtually any place where you need a protected power transistor. They also make nice AM power-modulators.
在你想要用到电源保护功能的地方几乎都能看到它。
The basic program is that in the wiper circuit the power transistor and relay are connected in series to perform drive control.
主要方案是，在刮水装置回路中串接功率三极管或继电器实行驱动控制。
A method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.
为了在试验周期中了解晶体管的结温，提出一种在功率晶体管稳态工作寿命试验过程中结温的测量与控制方法。
Introduced the method of multi-transistor modular design, for the output ability are limited in single high-frequency power transistor.
介绍了因单个高频大功率晶体管输出能力有限而采用多管并联运用(积木式)的方法。
The diameter, length, arch height and space of bond-wires have great impacts on the radio frequency performance of RF power transistor.
键合线的直径、长度、拱高和并列键合线间距等物理参量，均对器件性能有很大影响。
The principle of PAM PWM compound control and the power transistor AC adjustable speed system based on that principle are presented in this paper.
本文介绍PAM、PWM复合控制原理和按此原理研制的大功率晶体管宽调速交流调速系统。
The traditional methods for power transistor cant apply to power bare die due to various reasons such as high temperature and high operating currents.
由于存在高温度、大电流等问题，传统的测试与老化筛选功率管的方法不能完全适用于功率裸芯片。
The high-speed digital frequency mixer made of medium-scale integrated circuits and the design of a high power transistor amplifier are also presented.
介绍了高速中规模集成数字频率合成器、晶体管高频大功率放大器的设计。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate.
本发明公开一种半导体功率组件，其包括若干功率晶体管记忆胞，该记忆胞被开设于一半导体衬底中的沟槽所围绕。
The high-power transistor of exciter will be damaged after the 3-phase circuits' sudden short, which results in starving for the analysis and study of the phenomenon.
发电机突然三相短路会导致励磁系统大功率晶体管的损坏，必须对该现象进行分析和研究。
One inherent limitation of the forward converter is that the transformer must be reset during the power transistor off period. Thus, additional reset circuitry has to be used.
但是它的一个固有缺陷是功率晶体管截止期间变压器必须磁复位，因而需要采用附加的复位电路。
This paper describes the unload circuits which are used in power transistor (SOA). RCD unload circuit and a novel unload circuit without energy losses are presented, their effects are discussed.
本文讨论了大功率晶体管在开关过程中的卸载问题，给出了RCD卸载电路及一种新颖的无损耗卸载电路，分析了卸载电路的工作过程。
In a drive system of power transistor inverter-motor, not only can it be used in fine control of motor current waveform, phase, amplitude and frequency, but can also be used to sense, fault current.
在大功率晶体管逆变器——电动机驱动系统中，它不但可用来对电动机电流的波形、相位、幅值和频率进行精细控制，而且能快速地检测出故障电流。
For a long time, a common and popular method to solve current convergence problem of microwave power transistor is using emitter ballasting resistor, such as PTC, CTR thermistor, passive devices etc.
长期以来，解决微波功率晶体管的电流集中问题的通用做法是使用发射极镇流电阻，以及PTC,CTR热敏电阻等无源器件。
The choice engineers face is thus between supplying continuous power to a transistor, so that it can retain its memory.
因此，工程师们面临的选择就是要么对晶体管提供一个持续的电源，让晶体管保持自己的记忆。
A polysilicon emitter RCA microwave transistor was fabricated to fit the power application for the first time.
首次采用多晶硅发射区RCA技术制备出微波功率晶体管。
PNP epitaxial silicon transistor. Low frequency power amplifier.
PNP外延硅晶体管。低频功率放大器。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
Double pole transistor in power device is major and the apply of IGBT will be more and more.
功率器件以使用双极晶体管为主，今后使用IGBT会逐渐增多。
When a transistor dissipates power on work, its junction temperature distribution is commonly non-uniform.
晶体管在耗散功率时，结温分布一般不均匀。
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
有两个限制了晶体管的处理能力，功耗：平均交界处的温度和二次击穿。
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
有两个限制了晶体管的处理能力，功耗：平均交界处的温度和二次击穿。
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