Optotools, meanwhile, makes industrial fiber-coupled high-power semiconductor lasers.
Optotools公司同时将生产工业级光纤耦合高能半导体激光器。
The simulation results can guide the packaging of the high power semiconductor laser array.
该模拟结果对大功率半导体激光器阵列的封装设计具有现实的指导意义。
IGCT is a kind of high power semiconductor based on GTO structure, which achieves hard turn-off by the integrated gate circuit.
IGCT是一种基于GTO结构并利用集成门极电路进行硬驱动控制的大功率半导体开关器件。
Ohmic contact is a critical factor for high power semiconductor lasers.
欧姆接触的好坏，对高功率半导体激光器至关重要。
One of key problems is lasers cooling in researching high power semiconductor diode lasers.
大功率半导体激光器研制的关键问题之一就是散热冷却技术。
The linear measurement of SDL7432 power semiconductor laser has been discussed in this paper.
就SDL7432功率型半导体激光器的线性测量进行了讨论。
The second is electronic devices of high-performance power semiconductor such as MOSFET and IGBT.
二是正在快速更新的高性能功率半导体MOSFET和IGBT等电力电子器件；
One of the key problems is lasers cooling in researching high power semiconductor diode laser arrays.
大功率半导体激光器列阵研制的关键问题之一就是散热技术。
In recent years, considerable progress has been made in the high power semiconductor lasers in China and abroad.
近年来，国内外在大功率半导体激光器方面的研究均取得了很大的进展。
High power semiconductor lasers are widely used in communication, surgery, printing, laser manufacture and optical pump.
大功率半导体激光器在光通讯、医疗、印刷、激光制造和光泵浦等领域中有着广泛的应用前景。
The heat of high power semiconductor laser array is absorbed by a semiconductor refrigerator and dissipated by air cooling.
它利用半导体制冷器对大功率半导体激光阵列吸热，然后经由风冷散热。
VDMOS is a new generation of power semiconductor devices, the microelectronics and power electronics technology integration together.
VDMOS是微电子技术和电力电子技术融和起来的新一代功率半导体器件。
The principle of temperature control of high power semiconductor laser for communication and the composition of laser module are described.
主要叙述通信用大功率半导体激光器温控原理及激光组件的构成。
In this article, a new analysis method of network topology for power semiconductor swith circuits-method of tensor transformation, is presented.
提出电力半导体开关电路的网络拓扑分析的一种新方法——张量变换法。
The invention provides a power semiconductor module with improved inner structure, thus at least one power semiconductor element can be protected.
本发明提供了一种具有改进的内部结构的功率半导体模块，由此也达到保护至少一个功率半导体元件的目的。
Numerous attempts have been made at implementing power semiconductor-based breakers, but few have made a significant positive impact on power systems.
人们做了很多努力试图创造出以功率半导体为基础的断路器，但是在功率系统方面有重大成效的成功者却寥寥无几。
Today ordinary thyristor, GTO and IGBT play an important role in the applications of power semiconductor device for medium-voltage, and high power levels.
在目前的中电压大功率应用领域，占主导地位的功率半导体器件有晶闸管、GTO和IGBT等。
First developed by ABB Company, IGCT ( Integrated Gate Commutated Thyristor)is a new sort of power semiconductor, which integrates its gate device with the thyristor.
集成门极换流晶闸管IGCT是一种新型的电力电子器件，是将门极驱动电路和门极换流晶闸管GCT集成于一体的器件。
Isolated gate bipolar transistors (IGBTs) are widely used power semiconductor devices. Properly designed drivers are extremely important for the effective use of IGBTs.
绝缘栅双极型晶体管(IGBT)是应用广泛的功率半导体器件，驱动器的合理设计对于IGBT的有效使用极为重要。
The company is located between the Yangtze River and the Beijing-Hangzhou Grand Canal where it is a beautiful and ideal place for manufacture of power semiconductor devices.
公司位于长江和京杭大运河交界处，风景优美，是生产功率半导体器件的理想之地。
This paper studies and analyses mathematically the typical main circuits of the new generation of arc welding inverters using IGBT, MOSFET as power semiconductor switching devices.
对新一代弧焊逆变器各种典型的主电路进行了较深入的数学分析和研究。
The holographic interferogram of the temperature field for an axisymmetrical high power semiconductor triode has been obtained by using laser holographic interferometric measurement.
采用激光全息干涉测量技术测量了轴对称型大功率晶体三极管温度场的全息干涉图；
The holographic interferogram of the temperature field for an axisymmetrical high power semiconductor triode has been obtained by using laser holographic interferometric measurement.
采用激光全息干涉测量技术测量了轴对称型大功率晶体三极管温度场的全息干涉图；
应用推荐