This paper analyzes the failure mechanism of semiconductor P N junction temperature sensors and presents a new design to reduce the internal stresses and methods to improve the processes.
通过失效形式，分析了半导体P-N结温度传感器的失效机理，介绍了为降低内应力而进行的设计和工艺改进。
But when these two semiconductors are connected, they form a P-N junction.
但这两种半导体连接起来的时候，它们之间就形成一个P -N结。
The temperature behavior of the forward voltage VF of the P-N junction is discussed.
本文讨论了低温下P -N结的正向电压降v _ F随温度t变化的特性。
The solar cells include a substrate having a light collecting surface thereon and a P-N rectifying junction within the substrate.
太阳能电池包括基板，该基板具有在其上的光收集表面以及在该基板内的P-N整流结。
A P-N-Br synergistic flame retardant pentaerythritol bisphosphorate tribromoaniline salt was synthesized using phosphorus oxychloride, pentaerythritol, aniline, and bromine as raw materials.
以三氯氧磷、季戊四醇、苯胺和液溴为原料，合成了一种具有成炭结构的磷氮溴协效阻燃剂季戊四醇双磷酸三溴苯胺盐。
Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.
本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法。
Two chiral P, N-ligands were synthesized in high yields from natural quinine and cinchonine under mild conditions.
以价廉的天然产物辛可宁和奎宁为原料，在温和的条件下方便地合成了两个手性膦氮配体。
Process for manufacturing photosensitive flat-panel with Se allotropic P. N or N. P structure.
硒同素异晶P.N或N.P型结构的感光平板探测器的制造方法。
Record all the action and P/N and S/N of the removed/installed component as well as ATA chapter in the flight log book after any corrective maintenance action has been taken.
在采取任何纠正维修措施后，要将所作的所有工作以及拆下/安装部件的件号、序号，以及涉及到的ATA章节号，都记录在飞行记录本上。
The synthesis and application of the P-N intumescent flame retardant in the world in recent year have been summarized in this paper.
就近年来国内外P - N型膨胀阻燃剂的合成及应用进展情况作简要综述。
Our results indicate that voltage-gated ion channel currents recorded by Clampex will be more accurate and reproducible by properly using P/N leak subtraction.
结果表明， 在采集电压门控性离子通道电流时，合理地利用P/N漏减会使离子电流记录更为准确可靠。
A brief introduction is presented to discuss the performance and finishing process of P-N and its testing results as well.
本文就其性能、阻燃整理工艺及阻燃测试作了介绍。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
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