结果发现，带隙对应变条件非常敏感。
As discovered by the results, the band gap is very sensitive to strain condition.
由此得到温度系数很小的带隙基准电压。
Therefore, we get the bandgap reference voltage with very small temperature coefficient.
结果表明，这种结构具有一类新型的光子带隙。
It's shown that this structure can possess a new type of photonic gap.
文中设计了一种高阶温度补偿的精确带隙电压基准，使用0。
研究结果表明，材料介电常数越大两种结构得到的完全带隙越宽；
The effects of parameters of the structure to band structure have been also analyzed.
研究结果表明，材料介电常数越大两种结构得到的完全带隙越宽；
The effects of parameters of the structure to band structure have been also analyzed.
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