With deep submicron technology, crosstalk noise becomes more and more serious.
随着深亚微米技术，串扰噪声问题越来越严重。
The physics, structure and technology of the deep submicron MOS devices were given.
本文从器件物理、器件结构和工艺等三个方面介绍了深亚微米器件。
The physics, structure and technology of the deep submicron MOS devices were given.
本文从器件物理、器件结构和工艺等三个方面介绍了深亚微米器件。
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