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The body region was doped high to increase the back gate threshold voltage.
增加体区掺杂，以提高背栅阈值电压；
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The transistor may include a gate structure, a source region, and a drain region.
晶体管包含一栅结构、一源区和一漏区。
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The transistor may include a gate structure, a source region, and a drain region.
晶体管包含一栅结构、一源区和一漏区。
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