存储器单元通过感测单元的吸收电流进行读出。
The memory unit is read out via the absorption current of the sensing unit.
本发明还公 开了上述OTP存储器单元的读取和编程方法。
The invention also discloses a reading and coding method of above OTP memory cell.
一种集成电路包含存储器单元结构，其包含第一单元以及第二单元。
The first cell includes a first storage structure and a first gate over a substrate.
在每个可编址单元存储一个字符的存储器存储方法。
Memory - storing approach for storing one character in each addressable location.
在每个可编址单元存储一个字符的存储器存储方法。
Memory - storing approach for storing one character in each addressable location.
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