Transmission electron microscopy study shows the sizes of nc-Si grains on the two different substrates.
透射电子显微镜方法的研究显示了两种衬底上纳米硅晶粒的尺寸。
As the annealing temperature increases the red shift of PL peak from nc si shows the quantum size effect.
纳米硅的发光峰随退火温度升高而红移呈量子尺寸效应。
As the annealing temperature increases the red shift of PL peak from nc si shows the quantum size effect.
纳米硅的发光峰随退火温度升高而红移呈量子尺寸效应。
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