But when these two semiconductors are connected, they form a P-N junction.
但这两种半导体连接起来的时候，它们之间就形成一个P -N结。
The temperature behavior of the forward voltage VF of the P-N junction is discussed.
本文讨论了低温下P -N结的正向电压降v _ F随温度t变化的特性。
The source region and the drain region comprise a semiconductor junction mixedly formed by a Schottky junction and a P-N junction.
所述源极区域及漏极区域包括由肖特基结和P-N结混合形成的半导体结。
This paper analyzes the failure mechanism of semiconductor P N junction temperature sensors and presents a new design to reduce the internal stresses and methods to improve the processes.
通过失效形式，分析了半导体P-N结温度传感器的失效机理，介绍了为降低内应力而进行的设计和工艺改进。
Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.
本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法。
Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.
本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法。
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