The invention also relates to an integrated circuit structure with multiple-gate transistors with reverse T-shaped fins.
本发明还提供了一种具有倒T形鳍片多重栅晶体管的集成电路结构。
This technique facilitates the formation of multiple-gate structures, such as double-gate, triple-gate and all-around-gate.
应用此项技术能够方便地形成双栅、三栅以及围栅等各种多面栅结构；
This technique facilitates the formation of multiple-gate structures, such as double-gate, triple-gate and all-around-gate.
应用此项技术能够方便地形成双栅、三栅以及围栅等各种多面栅结构；
应用推荐