The results of this work show that non-planar, multi-gate device architecture is an effective way to improve the scalability of III-V QWFETs for low power logic applications,’’ according to the firm.
本文显示立体型多栅结构可有效提升低功耗逻辑用III-V族QWFET管子的尺寸缩微能力。
The structure and characteristic of multi-gate switch are described.
论述了多栅开关的结构和特点。
The structure and characteristic of multi-gate switch are described.
论述了多栅开关的结构和特点。
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