Non-volatile variohm, memory element, and its scaling method.
非易失性可变电阻器，存储器件，及其定标法。
Each memory element can store data represented in analog or digital form.
每个存储器元件可存储以模拟或数字形式表示的数据。
Moreover, the resistive memory element is connected between the contact plug and the bit line.
此外，电阻式存储器元件连接于接触窗插塞与位线之间。
A memory element can also store multiple states, thereby storing multiple bits of digital data.
存储器元件也可存储多个状态，借此存储多个数字数据位。
The state of the memory element can thereby be detected by a voltage comparator sense amplifier that is connected to the bit line.
因此可通过连接到位线的电压比较器读出放大器来检测存储器元件的状态。
The structure and operation algorithm of IME (intelligent memory element), and the essential unit of this model are discussed in detail.
给出了一个按模式记忆结构的记忆模型，详细讨论了它的基本构成单元——智能记忆单元IME的结构和操作。
In various designs, one or more of the components of FIG. 5, other than memory element array 202, can be thought of as a managing circuit.
在各种设计中，图5中除存储器元件阵列202以外的组件中的一者或一者以上可视为管理电路。
Such a flash memory device is sometimes referred to as a binary flash memory device because each memory element can store one bit of data.
这种快闪存储器装置有时称为二元快闪存储器装置，因为每个存储器元件可存储一个数据位。
The resistive memory cell comprises a first gate, a second gate, a common doped region, a contact plug, a bit line and a resistive memory element.
所述电阻式存储器单元包括第一栅极、第二栅极、共用掺杂区域、接触窗插塞、位线以及电阻式存储器元件。
When the threshold voltage is negative and a read is attempted by applying 0 V to the control gate, the memory element will turn on to indicate logic one is being stored.
当阈值电压为负且通过向控制栅极施加0V来尝试读取时，存储器元件将接通以指示正在存储逻辑1。
If you're monitoring the polarization for a logic device or memory element, you can apply a small electric field to traverse this boundary and simultaneously read and write the on-and-off state.
如果这一极性的有无能够被逻辑装置或是记忆元件测得，我们就可以用一微弱电场来改变其极性，同时获知极性的有无状态。
The specific relationship between the data programmed into the memory element and the threshold voltage ranges of the element depends upon the data encoding scheme adopted for the memory elements.
编程到存储器元件中的数据与元件的阈值电压范围之间的具体关系取决于对存储器元件采用的数据编码方案。
A new kind of strain measuring element, the Max. Strain Memory element, is introduced in this paper. The element has the function to memorize the value of maximum strain of the loading history.
本文介绍的新型的应变测试元件——最大应变记忆元件，具有记忆构件上曾经历过的最大应变值的功能。
A new kind of strain measuring element, the Max. Strain Memory element, is introduced in this paper. The element has the function to memorize the value of maximum strain of the loading history.
本文介绍的新型的应变测试元件——最大应变记忆元件，具有记忆构件上曾经历过的最大应变值的功能。
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