Non-volatile variohm, memory element, and its scaling method.
非易失性可变电阻器，存储器件，及其定标法。
Each memory element can store data represented in analog or digital form.
每个存储器元件可存储以模拟或数字形式表示的数据。
The memory element includes a magnetic tunnel junction (MTJ) element and an electrode.
存储器组件包括一磁穿隧接 面（MTJ）组件与一电极。
Moreover, the resistive memory element is connected between the contact plug and the bit line.
此外，电阻式存储器元件连接于接触窗插塞与位线之间。
A memory element can also store multiple states, thereby storing multiple bits of digital data.
存储器元件也可存储多个状态，借此存储多个数字数据位。
The state of the memory element can thereby be detected by a voltage comparator sense amplifier that is connected to the bit line.
因此可通过连接到位线的电压比较器读出放大器来检测存储器元件的状态。
The structure and operation algorithm of IME (intelligent memory element), and the essential unit of this model are discussed in detail.
给出了一个按模式记忆结构的记忆模型，详细讨论了它的基本构成单元——智能记忆单元IME的结构和操作。
In various designs, one or more of the components of FIG. 5, other than memory element array 202, can be thought of as a managing circuit.
在各种设计中，图5中除存储器元件阵列202以外的组件中的一者或一者以上可视为管理电路。
Such a flash memory device is sometimes referred to as a binary flash memory device because each memory element can store one bit of data.
这种快闪存储器装置有时称为二元快闪存储器装置，因为每个存储器元件可存储一个数据位。
The resistive memory cell comprises a first gate, a second gate, a common doped region, a contact plug, a bit line and a resistive memory element.
所述电阻式存储器单元包括第一栅极、第二栅极、共用掺杂区域、接触窗插塞、位线以及电阻式存储器元件。
When the threshold voltage is negative and a read is attempted by applying 0 V to the control gate, the memory element will turn on to indicate logic one is being stored.
当阈值电压为负且通过向控制栅极施加0V来尝试读取时，存储器元件将接通以指示正在存储逻辑1。
A new kind of strain measuring element, the Max. Strain Memory element, is introduced in this paper. The element has the function to memorize the value of maximum strain of the loading history.
本文介绍的新型的应变测试元件——最大应变记忆元件，具有记忆构件上曾经历过的最大应变值的功能。
If you're monitoring the polarization for a logic device or memory element, you can apply a small electric field to traverse this boundary and simultaneously read and write the on-and-off state.
如果这一极性的有无能够被逻辑装置或是记忆元件测得，我们就可以用一微弱电场来改变其极性，同时获知极性的有无状态。
The specific relationship between the data programmed into the memory element and the threshold voltage ranges of the element depends upon the data encoding scheme adopted for the memory elements.
编程到存储器元件中的数据与元件的阈值电压范围之间的具体关系取决于对存储器元件采用的数据编码方案。
DOM is easy to use (except when it's unnecessarily hard, like getting the text from an element), but can be bloated and a memory hog.
DOM易于使用(尽管有时候存在一些不必要的麻烦，比如提取元素中的文本)，但它可能变得很庞大，占用很多内存。
However, this new code now assumes that the starting address is 16-byte aligned, and also that it has enough padding on the end that the next data element in memory is also 16-byte aligned.
然而，这段新代码假定起始地址是按照16字节对齐的，并且末尾也有足够的填充位，因此内存中下一个数据元素也是16字节对齐的。
The state space may be thought of as a big vector space with each basis element spanning the possible states of one system element (say a memory register or the CAM Angle).
状态空间可能被认为是一个大向量空间，其每个基本元素跨越一个系统元素的可能状态(比方说内存寄存器或偏心角)。
The process is simple: you take a known image - called the memory peg - and combine with the element you want to memorize.
过程很简单：你选择一个已知的图像——称为记忆挂钩——和你想记住的要素结合起来。
This allows the element in the structure to reference memory that follows and is contiguous with the structure instance.
这允许结构中的元素引用结构实例后面紧接着的内存。
The described conversion is straight-forward and can be done in-place, i.e. the memory area holding the WKT string is modified directly to transform it to a valid SVG element string.
上述转换非常简单，可以一次完成，即，直接修改存放wkt字符串的存储区，将其转换为一个有效的SVG元素字符串。
On output, about which you'll see more later, it means that the in-memory representation of the data includes the name of the root element.
正如在后面的输出中看到的，这意味着数据的内存表示会包含根元素的名称。
The first element simply checks for the existence of a Machine instance in the working memory.
第一个元素只检查工作内存中是否存在一个Machine实例。
A configuration object is the memory image of the configuration element and is the entry to access and change a resource.
配置对象是configuration元素的内存映像，并且是访问和更改资源的入口。
The key element is the use of the word cache: memcached provides temporary storage, in memory, of information that can be loaded from elsewhere.
这里的关键是使用了术语缓存：memcached为加载自他处的信息提供的是内存中的暂时存储。
For every XUINode (the in-memory object representing any XML element) read in by the framework, a XUIComponent must be created to encompass the XUINode.
对于框架读入的每个XUINode(表示任意xml元素的内存对象)，必须创建一个XUIComponent来包围XUINode。
The processing element contains a processor and some local memory.
处理单元包括一个处理器和一些本地存储器。
Compared with the finite element method, the method proposed in this paper requires less memory, less original data to input into computer, and has higher calculating accuracy.
与有限单元法相比，本方法所需的计算机内存少。原始数据输入较简单，算例表明，计算精度高。
A hybrid smart structure integrated with shape memory alloy slims and piezoelectric ceramic patches as united actuators, was presented and modeled by finite element methods.
提出了嵌入形状记忆合金丝和压电陶瓷片作为联合变形驱动器的二元智能结构，并建立了有限元模型。
The Finite Element Analyses (FEA) of complex constructions need huge memory and consume much time.
复杂结构的有限元分析需要耗费巨大的内存和计算机时间。
The computational results of Three Gorges Dam show that this combination method needs far less memory capacity and saves much more time than alone Finite element method with small element sizes.
经三峡大坝的计算表明，这种结合方法比单纯采用有限元方法少占用计算机许多存储单元，节省大量的机时。
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