These provide physical access to memory devices, and are not used directly.
这些模块提供对内存设备的物理访问，但并不直接使用它们。
Typically, nonvolatile memory devices are hard disks, but they can also be solid-state devices like secure digital (SD) cards and even magnetic tape devices (all but obsolete now).
非易失性存储设备一般为硬盘，但也可以是安全数字（SD）卡之类的固态设备，甚至可以是磁带设备（不过现在已经过时了）。
The dangers of that have just become apparent with the news that the Pentagon has banned the use of all portable memory devices because of the spread of a bit of malicious software called agent.btz.
这种行为的危险性现在很清晰了，为了避免感染一种名叫“agent .btz”的恶意软件，五角大楼已经禁止使用所有便携式存储设备。
Metal sulfides have shown great potential in the areas of solar cells, thermoelectrical materials and memory devices.
金属硫化物在太阳能电池、热电材料以及存储装置等领域显示出了广阔的应用前景。
Nanostructured materials are expected to play a crucial role in the future technological advance in electronics, optoelectronics, and memory devices.
纳米结构材料在电子学、光电子学及存储器件等领域具有深远的应用前景。
A storage cell in some amorphous memory devices.
某些非晶体存储器中的一个存储单元。
A memory module includes several memory devices coupled to a memory hub.
一种存储器模块，包括连接到存储器集线器的几个存储装置。
That's because Kingston makes the memory devices often used in those gadgets.
那是因为金士顿公司制造了常用于那些小玩意的存储器件。
Embodiments herein provide data recovery techniques and configurations for solid state memory devices.
本发明公开了固态存储器装置中的数据恢复。
Because they can store electrical charges, CCDs can be used as memory devices, but they are slower than RAMs.
由于电荷耦合组件能够储存电荷，它们可以当作记忆装置，但比随机存取内存慢。
Related one-time programmable devices, phase change memory devices and electronic systems are also disclosed.
还公 开了相关的一次可编程器件、相变存储器件和电子系统。
Some embodiments of the apparatus relate to NAND-like memory arrays employing high- density NOR-like memory devices.
设备的一些实施例涉及采用高密度类NOR存储器装置的类NAND存储器阵列。
A phase change memory formed by a plurality of phase change memory devices having a chalcogenide memory region (28) extending over an own heater (26).
一种由多个具有在自身的加热体(26)上方延伸的硫属化物存储区(28)的相变存储器件形成的相变存储器。
The capacity and speed of the memory subsystem in this architecture can be improved using the existed memory devices while the cost can be downgraded without enhancement of the clock frequency.
该结构可利用现有存储器件在不增加时钟频率的情况下，提高存储器系统的容量和速度，同时降低成本。
The capacity and speed of the memory subsystem in this architecture can be improved using the existed memory devices while the cost can be downgraded without enhancement of the clock frequency.
该结构可利用现有存储器件在不增加时钟频率的情况下，提高存储器系统的容量和速度，同时降低成本。
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