The method is different from the traditional single antiferromagnetic material growth or the conventional atom substituted doped growth.
本方法不同于传统的单一反铁磁材料生长，或常规的原子替位的掺杂生长。
The method is different from the traditional single antiferromagnetic material growth or the conventional atom substituted doped growth.
本方法不同于传统的单一反铁磁材料生长，或常规的原子替位的掺杂生长。
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