The process and properties of ITO films are described.
介绍了膜的制备工艺和膜的特性。
The technology survey and development tendency of ITO films were reviewed.
综述了铟锡氧化物（ITO）薄膜的生产技术概况及其发展趋势。
Together, these problems severely limit the applications of ITO films for future optoelectronic devices.
总的来说这俩个问题限制了氧化铟薄片在未来光电设备的运用。
High quality ITO films are prepared onto K9 glass substrates by oxygen ion-assisted electron beam reactive evaporation.
采用氧离子辅助电子束反应蒸发工艺在K9玻璃基底上制备了性能优异的ITO薄膜。
XRD test showed that grain size of ITO films increased and crystallization direction(400) disappeared with more oxygen flow.
射线衍射（XRD）测试表明ITO薄膜的晶粒尺寸随膜内氧的摩尔分数增加而增大，随氧气比例增加薄膜（400）晶向消失。
The research and development of TCO films (including ITO films and AZO) prepared on flexible substrate will expand more applications.
柔性衬底氧化物半导体透明导电薄膜的开发和应用将扩大TCO薄膜的应用领域。
To meet the demands of transparent electrodes of OLED devices, ITO films were deposited at low substrate temperature, and their performances were discussed in this paper.
本论文针对OLED器件透明电极的要求，对ITO膜的低温制备工艺进行了深入的研究。
Analyzing the problems which often happen in the portable square resistance meter for the thin films on ITO glass surface, some solutions were proposed and carried out by tests.
针对手提式薄膜方块电阻测试仪在使用中容易出现的问题，进行分析研究，提出了解决方案，并在实验中得到实现。
The resistivity and surface roughness of Indium tin oxide (ITO) films will affect the light-emitting efficiency and lifetime of the organic light-emitting diodes (OLED).
氧化铟锡(ito)膜的电阻率及表面粗糙度将影响有机电致发光器件(OLED)的发光效率及其使用寿命。
Zinc oxide thin films were prepared by pulsed laser deposition (PLD) on glass substrates coated with tin-doped indium oxide (ITO) thin films in this paper.
本文采用射频辅助脉冲激光沉积(PLD)系统，在镀有透明导电膜氧化锡铟(ito)的玻璃衬底上制备了氧化锌薄膜。
Tin doped indium oxide (ITO) films were deposited on glass substrates by reactive magnetron sputtering using a metallic alloy target (in Sn, 90 10).
采用铟锡合金靶(铟锡，90 - 10)，通过直流反应磁控溅射在玻璃基片上制备出ito薄膜，并在大气环境下高温退火处理。
The properties and applications, preparation and market situation of indium tin oxide (ITO) films were reviewed.
对铟锡氧化物(I T O)薄膜的特性和应用，制备方法以及市场情况进行了综述。
ITO thin films were prepared by radio-frequency magnetron sputtering technique at different sputtering power, and applied to HIT solar cells.
采用射频磁控溅射技术在不同射频功率下沉积了ITO薄膜，并将其应用于HIT太阳电池。
The cylindrical LC lens array uses transparent indium tin oxide (ITO) films as electrode, avoiding to affect the optical path operating in the voltage-off status.
该液晶柱透镜采用透明ITO膜作为导电极，使得该柱透镜在未加电状态下不会影响光路的正常使用。
The Indium-tin oxide (ITO) films were prepared on glass substrate using sol-gel dip coating method.
采用溶胶-凝胶工艺，用提拉法在玻璃基底上制备了ITO透明导电薄膜。
The PEG-doped ITO thin films have the porous structure, which can be used as the gas-sensing material.
采用掺杂PEG的ITO薄膜具有多孔结构，该结构能够让ITO薄膜成为一种气敏材料。
Firstly, ITO conductive anode films were fabricated on glass tube substrates by sol-gel process.
首先，本文重点研究了ITO薄膜的溶胶—凝胶制备工艺。
Several methods of the preparation of ITO thin film with sol-gel technique were introduced. The ITO thin films were gotten by the inorganic method.
介绍了几种用溶胶凝胶法制备ito薄膜的工艺方法，用其中一种无机的方法成功制备了ITO透明导电膜。
The effect on the electrical and optical properties is studied as ITO transparent conductive thin films prepared by DC magnetron reactive sputtering technique with different deposition parameters.
论述了高温直流磁控反应溅射法制备ito透明导电薄膜时氧分压、溅射气压和溅射电流等参数对其光电特性的影响。
WO_ (3) electrochromic films were prepared on ITO glass substrates by the sol-gel method.
采用溶胶-凝胶法，在氧化铟锡(ito)玻璃基质上制备氧化钨电致变色薄膜。
WO_ (3) electrochromic films were prepared on ITO glass substrates by the sol-gel method.
采用溶胶-凝胶法，在氧化铟锡(ito)玻璃基质上制备氧化钨电致变色薄膜。
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